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    IC 812A Search Results

    IC 812A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 812A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC812A LTC2606 16-Bit Rail-to-Rail VOUT DAC with I2C Interface Description Demonstration circuit 812A features the LTC 2606 16-bit DAC with I2C interface. This device establishes a new board-density benchmark for 16-bit DACs and advances performance standards for output drive and load


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    DC812A LTC2606 16-Bit DC812A LTC2606. LTC2606 LTC2421 20-bit PDF

    812a

    Abstract: ic 812a Svetlana 812a ceramic insulator high voltage Svetlana 812a power Triode Power Triode pc1a 652 HE ic rca 340
    Text: SVETLANA TECHNICAL DATA 812A Medium-Mu Power Triode T he SvetlanaTM 812A is a high perveance, easy to drive medium-mu triode closely modeled after the original RCA design. Improvements include a low loss easy to clean ceramic base and a cermic thermal insulator under


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    30MHz 100MHz. 812a ic 812a Svetlana 812a ceramic insulator high voltage Svetlana 812a power Triode Power Triode pc1a 652 HE ic rca 340 PDF

    HM5164400LJ-5

    Abstract: HM5164400LJ-6 Hitachi DSA00196
    Text: HM5164400 Series HM5165400 Series 64 M FP DRAM 16-Mword x 4-bit 8 k Refresh/4 k Refresh ADE-203-812A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The Hitachi HM5164400 Series, HM5165400 Series are 64M-bit dynamic RAMs organized as 16,777,216word × 4-bit. They have realized high performance and low power by employing CMOS process technology.


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    HM5164400 HM5165400 16-Mword ADE-203-812A 64M-bit 216word HM5164400LJ-5 HM5164400LJ-6 Hitachi DSA00196 PDF

    LPC 836 red laser diode

    Abstract: LPC 826 red laser diode CN802 PWB 826 service manual transistor N14 193 K2EEYB000001 CN603 DL3U21518AAA toshiba dvd hdd schematic diagram ic 804
    Text: ORDER NO. CPD0603050C1 Notebook Computer CF-74 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-74CCBAXBM 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.


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    CPD0603050C1 CF-74 CF-74CCBAXBM EN60825 CF-74 LPC 836 red laser diode LPC 826 red laser diode CN802 PWB 826 service manual transistor N14 193 K2EEYB000001 CN603 DL3U21518AAA toshiba dvd hdd schematic diagram ic 804 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 20N120B IXGQ 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns BD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    20N120B 20N120BD1 IC110 13/10t 728B1 123B1 728B1 065B1 PDF

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    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 20N120B IXGQ 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns BD1 Maximum Ratings TO-3P (IXGQ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


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    20N120B 20N120BD1 IC110 728B1 123B1 065B1 PDF

    igbt induction cooker

    Abstract: induction cooker application notes induction heating cooker siemens induction cooker
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 20N120B IXGQ 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns BD1 Maximum Ratings TO-3P (IXGQ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


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    20N120B 20N120BD1 IC110 728B1 123B1 728B1 065B1 igbt induction cooker induction cooker application notes induction heating cooker siemens induction cooker PDF

    20N120BD1

    Abstract: ixys dsep 8-12a
    Text: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    20N120B 20N120BD1 IC110 O-220 728B1 123B1 065B1 20N120BD1 ixys dsep 8-12a PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 PDF

    IXGQ28N120B

    Abstract: 28N120 induction cooker application notes IXGQ28N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


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    28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 IXGQ28N120B 28N120 induction cooker application notes IXGQ28N120BD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


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    20N120BD1 20N120BD1 O-247AD O-268 O-247AD/TO-268 PDF

    IXGH 28N120BD1

    Abstract: igbt induction cooker 28N120
    Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


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    28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120 PDF

    IXGH 28N120BD1

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1 PDF

    35N120

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


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    35N120BD1 IC110 IF110 35N120 PDF

    IXGH20N120BD1

    Abstract: IXGH 20N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    D812Ar

    Abstract: ad812
    Text: ANALOG DEVICES Dual, Current Feedback Low Power Op Amp AD812 □ FE A T U R ES Tw o Video Am plifiers in One 8-Pin SO IC Package Optimized for Driving Cables in Video System s Excellent Video Specifications RL = 150 11 : Gain Flatness 0.1 dB to 40 M H z 0.02% Differential Gain Error


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    AD812 D812Ar ad812 PDF

    TRANSISTOR manual

    Abstract: cl 100 hie 2SB128A 2SD1110A 762B ic 812a transistor 152 M
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    Tc-25 2SD1110A TRANSISTOR manual cl 100 hie 2SB128A 2SD1110A 762B ic 812a transistor 152 M PDF

    2T301

    Abstract: a49a OC26 OC26 transistor 2S131 2SB121 2SB128A 2T302 2T303 2T304
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : • M -EiiO SW H E New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. W e hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


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    Tc-25 2SD1110A 2T301 a49a OC26 OC26 transistor 2S131 2SB121 2SB128A 2T302 2T303 2T304 PDF

    IGNITOR Z 400 M diagram

    Abstract: 2SD1043 2SB812 2SD1032 IC 78 2SD1032A 2SB812A IC4a ic t 4a 8
    Text: PANASONIC INDL/ELEK-CSEtllJ 7EC D | 1 1 3 5 6 5 M □ 7 ^ 3^ / / | 2S D 1032, 2SD 1032A 2SD1032, 2SD1032A '> 1J u > N P N ^ J f c / S i N P N T riple D iffused Planar i f i J O J i f c i l f t l i i S f f l / A F P o w e r A m p lif ie r 2SB 812, 2SB 812A t ^


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    2SD1032, 2SD1032A 2SB812, 2SB812A 2SB812A 2SD1032 IGNITOR Z 400 M diagram 2SD1043 2SB812 IC 78 2SD1032A IC4a ic t 4a 8 PDF

    tube 812A

    Abstract: 812 tube 812 triode bu 808 af ic 812a 812a power Triode 812a 2A3 power Triode 812 058 tube 812
    Text: 812A Power Triode GENERAL DATA E le c t r i c a l : F il a m e n t , T h o r ia t e d T u n g s t e n : V o l t a g e AC o r D C . C u r r e n t a t f ila m e n t v o l t s = 6 . 3 • • Amp] i f ¡ c a t i on F a c t o r .


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    92CM-6938 92CM-6937 tube 812A 812 tube 812 triode bu 808 af ic 812a 812a power Triode 812a 2A3 power Triode 812 058 tube 812 PDF

    814a

    Abstract: MB812A MB810A 813A MB811A FPT-16C-C01 MB81 MB813A MB814A 8-MB810A
    Text: FUJITSU August 1991 DATA SHEET MB810A / 811A / 812A /813A /814A Ultra High-Speed ECL ICs Ultra High-speed ECL Family The Fujitsu M B810A series is an ultra high-speed logic designed for high-speed digital systems. The MB81OA series is suitable fo r use in high-speed transmission


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    MB810A/811A MB810A 16-pin 814a MB812A 813A MB811A FPT-16C-C01 MB81 MB813A MB814A 8-MB810A PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5164400 Series HM5165400 Series 64 M FP DRAM 16-Mword x 4-bit 8 k Refresh/4 k Refresh HITACHI ADE-203-812A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The Hitachi H M 5164400 Series, H M 5165400 Series are 64M-bit dynamic RAMs organized as 16,777,216w ord X 4-bit. They have realized high perform ance and low pow er by em ploying CMOS process


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    HM5164400 HM5165400 16-Mword ADE-203-812A 64M-bit 32-pin ns/60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W91810N SERIES 23-MEMORY TONE/PULSE DIALER WITH HANDFREE, LOCK AND HOLD FUNCTIONS GENERAL DESCRIPTION The W91810N is a series of tone/pulse switchable telephone dialers with 23 memory, keytone, hold, lock, mute, volume control and handtree dialing control features. These chips are fabricated using


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    W91810N 23-MEMORY PDF