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    HYNIX ORIGIN COUNTRY Search Results

    HYNIX ORIGIN COUNTRY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    R9A07G054L27GBG#AC0 Renesas Electronics Corporation General-Purpose Microprocessor Equipped With Renesas' Original AI-Dedicated Accelerator DRP-AI, 1.2GHz Dual-Core Arm® Cortex®-A55 CPU, 3D Graphics, and Video Codec Engine Visit Renesas Electronics Corporation
    R9A07G054L13GBG#BC0 Renesas Electronics Corporation General-Purpose Microprocessor Equipped With Renesas' Original AI-Dedicated Accelerator DRP-AI, 1.2GHz Dual-Core Arm® Cortex®-A55 CPU, 3D Graphics, and Video Codec Engine Visit Renesas Electronics Corporation
    R9A07G054L18GBG#AC0 Renesas Electronics Corporation General-Purpose Microprocessor Equipped With Renesas' Original AI-Dedicated Accelerator DRP-AI, 1.2GHz Dual-Core Arm® Cortex®-A55 CPU, 3D Graphics, and Video Codec Engine Visit Renesas Electronics Corporation
    R9A07G054L27GBG#BC0 Renesas Electronics Corporation General-Purpose Microprocessor Equipped With Renesas' Original AI-Dedicated Accelerator DRP-AI, 1.2GHz Dual-Core Arm® Cortex®-A55 CPU, 3D Graphics, and Video Codec Engine Visit Renesas Electronics Corporation
    R9A07G054L23GBG#AC0 Renesas Electronics Corporation General-Purpose Microprocessor Equipped With Renesas' Original AI-Dedicated Accelerator DRP-AI, 1.2GHz Dual-Core Arm® Cortex®-A55 CPU, 3D Graphics, and Video Codec Engine Visit Renesas Electronics Corporation
    R9A07G054L28GBG#BC0 Renesas Electronics Corporation General-Purpose Microprocessor Equipped With Renesas' Original AI-Dedicated Accelerator DRP-AI, 1.2GHz Dual-Core Arm® Cortex®-A55 CPU, 3D Graphics, and Video Codec Engine Visit Renesas Electronics Corporation

    HYNIX ORIGIN COUNTRY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING HYNIX Origin Country

    Abstract: MARKING HYNIX HYNIX Origin Country
    Text: HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No 00 History Initial Draft Draft Date Remark Jan.19.2002 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any


    Original     		PDF HY62KF08802B 004MAX HY62KF8802B MARKING HYNIX Origin Country MARKING HYNIX HYNIX Origin Country

    HY628100B-LLG55

    Abstract: No abstract text available
    Text: HY628100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Marking Information Add Revised - E.T -25~85°C , I.T (-40~85°C) Part Insert


    Original     		PDF HY628100B 128Kx8bit HY628100B HY628100B-LLG55

    VDR 0047

    Abstract: No abstract text available
    Text: HY62V8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Revision History Insert Revised - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.06.2000 Final 04 Revised


    Original     		PDF HY62V8400A 512Kx8bit HY62V8400A VDR 0047

    VDR 0047

    Abstract: HY62KF08802B HY62KF08802B-DD HY62KF08802B-SD MARKING HYNIX Origin Country HYNIX Origin Country
    Text: HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No 00 History Initial Draft Draft Date Remark Jan.19.2002 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility


    Original     		PDF HY62KF08802B HY62KF8802B VDR 0047 HY62KF08802B-DD HY62KF08802B-SD MARKING HYNIX Origin Country HYNIX Origin Country

    HY62CT08081E

    Abstract: HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I
    Text: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load


    Original     		PDF HY62CT08081E 32Kx8bit HY62CT08081E HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I

    HY628400ALLG-55

    Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
    Text: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add


    Original     		PDF HY628400A 512Kx8bit HY628400A HY628400ALLG-55 VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I

    VDR 0047

    Abstract: MARKING HYNIX Origin Country
    Text: HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark Jan.19.2002 Preliminary 00 Initial Draft 01 DC Electrical Characteristics Nov.06.2002 - ICC changed 4mA -> 3mA


    Original     		PDF HY62KF08802B HY62KF8802B VDR 0047 MARKING HYNIX Origin Country

    VDR 0047

    Abstract: No abstract text available
    Text: HY62U8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Revised - Insert 70ns Part - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.26.2000


    Original     		PDF HY62U8400A 512Kx8bit 15ns/20ns HY62U8400A 100ns VDR 0047

    HY62CT081

    Abstract: hy62ct081e HY62CT08081E
    Text: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load


    Original     		PDF HY62CT08081E 32Kx8bit HY62CT081E HY62CT08081E HY62CT081 hy62ct081e

    VDR 0047

    Abstract: HY62KF16403E HYNIX Origin Country
    Text: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No 00 History Initial Draft Draft Date Remark Dec.26.2001 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility


    Original     		PDF HY62KF16403E 256Kx16bit 16bit 16bits. HY62KF6403E VDR 0047 HYNIX Origin Country

    Untitled

    Abstract: No abstract text available
    Text: HY62U8100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Insert 70ns Part Jul.25.2000 Final 11 Change the Notch Location of sTSOP


    Original     		PDF HY62U8100B 128Kx8bit HY62U8100B 100ns

    hy62kt081e

    Abstract: HY62VT08081E-DPC
    Text: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type


    Original     		PDF HY62K T08081E 32Kx8bit T08081 HY62vT081E HY62KT081E HY62UT081E hy62kt081e HY62VT08081E-DPC

    Untitled

    Abstract: No abstract text available
    Text: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any


    Original     		PDF HY62LF16206B-DT12C 128Kx16bit HY62LF16206B 16bits. 120ns

    Untitled

    Abstract: No abstract text available
    Text: HY62U8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 03 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA => 30mA Jul.29.2000 Final


    Original     		PDF HY62U8200B 256Kx8bit HY62U8200B

    MARKING HYNIX

    Abstract: MARKING HYNIX Origin Country Hynix Semiconductor VDR 0047 HY62KF16403E HYNIX Origin Country
    Text: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark Dec.26.2001 Preliminary 00 Initial Draft 01 Absolute Maximum Ratings Nov.14.2002 - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V


    Original     		PDF HY62KF16403E 256Kx16bit 16bit HY62KF6403E HY62KF16403E MARKING HYNIX MARKING HYNIX Origin Country Hynix Semiconductor VDR 0047 HYNIX Origin Country

    HY62V8100BLLT1-70

    Abstract: No abstract text available
    Text: HY62V8100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Change the Notch Location of sTSOP - Left-Top => Left-Center


    Original     		PDF HY62V8100B 128Kx8bit HY62V8100B HY62V8100BLLT1-70

    Untitled

    Abstract: No abstract text available
    Text: HY62V8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Jul.29.2000 Final 04


    Original     		PDF HY62V8200B 256Kx8bit HY62V8200B

    HY62KT08081E-C

    Abstract: HY62KT08081E-E HY62KT08081E-I HY62UT08081E-C HY62UT08081E-E HY62VT08081E-C HY62VT08081E-E HY62VT08081E-I t0808
    Text: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type


    Original     		PDF HY62K T08081E 32Kx8bit T08081c HY62vT08081E HY62KT08081E HY62UT08081E 100ns HY62KT08081E-C HY62KT08081E-E HY62KT08081E-I HY62UT08081E-C HY62UT08081E-E HY62VT08081E-C HY62VT08081E-E HY62VT08081E-I t0808

    MARKING HYNIX

    Abstract: MARKING HYNIX Origin Country
    Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration


    Original     		PDF HY62LF16206A-LT12C 128Kx16bit 120ns MARKING HYNIX MARKING HYNIX Origin Country

    MARKING HYNIX Origin Country

    Abstract: No abstract text available
    Text: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any


    Original     		PDF HY62LF16206B-DT12C 128Kx16bit HY62LF16206B 16bits. 120ns MARKING HYNIX Origin Country

    HY64SD16162B

    Abstract: HY64SD16162B-DF85E HY64SD16162B-DF85I
    Text: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


    Original     		PDF HY64SD16162B 16Mbit 16bits. HYSD16162B HY64SD16162B-DF85E HY64SD16162B-DF85I

    HYUD16162B

    Abstract: HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I
    Text: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 3. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


    Original     		PDF HY64UD16162B 16Mbit 16bits. HYUD16162B HYUD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I

    HYUD16162B

    Abstract: HYUD16162
    Text: HY64UD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Dec. 3. ’02 Preliminary 1.1 DC Spec.변경 Apr. 21. ‘03 This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not


    Original     		PDF HY64UD16162B 16Mbit HYUD16162B HYUD16162B HYUD16162

    Untitled

    Abstract: No abstract text available
    Text: HY64LD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul.18. ‘ 01 Preliminary Oct. 06. ’ 01


    Original     		PDF HY64LD16322M HYLD16322M