VDR 0047
Abstract: No abstract text available
Text: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Dec.26.2001 Preliminary 0.1 Absolute Maximum Ratings - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V
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Original
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PDF
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HY62KF16403E
256Kx16bit
16bit
HY62KF6403E
HY62KF1ical
44pin
400mil
VDR 0047
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MARKING HYNIX
Abstract: MARKING HYNIX Origin Country Hynix Semiconductor VDR 0047 HY62KF16403E HYNIX Origin Country
Text: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark Dec.26.2001 Preliminary 00 Initial Draft 01 Absolute Maximum Ratings Nov.14.2002 - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V
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Original
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PDF
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HY62KF16403E
256Kx16bit
16bit
HY62KF6403E
HY62KF16403E
MARKING HYNIX
MARKING HYNIX Origin Country
Hynix Semiconductor
VDR 0047
HYNIX Origin Country
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VDR 0047
Abstract: HY62KF16403E HYNIX Origin Country
Text: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No 00 History Initial Draft Draft Date Remark Dec.26.2001 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
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Original
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PDF
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HY62KF16403E
256Kx16bit
16bit
16bits.
HY62KF6403E
VDR 0047
HYNIX Origin Country
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