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    Untitled

    Abstract: No abstract text available
    Text: ♦HYUNDAI SEMICONDUCTOR HYM591000C Series 1M x 9-bit CMOS ORAM MODULE DESCRIPTION The HYM591000C is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^ mF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM591000C HY531000A HYM591000CM/CLM 1BB08-10-MAY93 1BB08-10-MAYM 1BB08-10-MAVM

    Untitled

    Abstract: No abstract text available
    Text: HYM591610 Series »HYUNDAI SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting ol nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591610 HY5117100 HYM59161OM/LM/TM/LTM HYM591610M/LM HYM591610TM/LTM 1BDO4-O0-MAY93 HYM591610M

    Untitled

    Abstract: No abstract text available
    Text: HYM591600 M-Series •HYUNDAI 16M X 9 -b it CMOS DRAM MODULE DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.2?k F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591600 HY5116100 HYM591600M/LM/TM/LTM HYM591600M/LM 1-781MIN. HYM591600TM/LTM 0-05f1 76MIN. 03IMIN.

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM591610 M-Series 16M X 9-bit C M O S DRAM MODULE DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMO S DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591610 HY5117100 22//F HYM59161OM/LM/TM/LTM 03IMIN. HYM591610TM/LTM 781MIN. 031MIN. 1BD04-11-MAR94

    Untitled

    Abstract: No abstract text available
    Text: HYM591600 Series ' H Y U N D A I SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591600 HY5116100 HYM591600M/LM/TM/LTM HYM591600M/LM HYM591600TM/LTM 1BD03-00-MAY93 HYM591600M HYM591600LM

    HYM591000AM

    Abstract: bb04 HY531000
    Text: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted


    OCR Scan     		PDF HYM591000A HY514400 HY531000 HYM591000AM tWCHf31) BB04-20-M 04-20-M bb04

    HYM591000

    Abstract: HY531000 HYM591000M AV93
    Text: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM591000 HY531000 HYM591000M 1BB02-12-MAYM 1BB02-12-MAY93 AV93

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM591000C HY531000A 22/iF HYM591OOOCM/CLM 1BB08-10-MAYW 4b750Ã 07IV7B1

    HYM591000

    Abstract: No abstract text available
    Text: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted


    OCR Scan     		PDF HYM591000A HY514400 HY531000 HYM591000AM 0177G 1BB04-20-M 0QG1771 HYM591000

    HYM591000M

    Abstract: No abstract text available
    Text: HY UN DA I E L E C T R O N I C S SIE D •HYUNDAI SEMICONDUCTOR • 4L>75Gfifi TS3 H H Y N K HYM591000 1MX9-Bit C MOS DRAM MODULE M 4 4 1 2 0 1 C -J A N 9 2 18 DESCRIPTION FEATURES The HYM591000M is a 1M words by 9 bits dynamic RAM module and consists of nine


    OCR Scan     		PDF 75Gfifi HYM591000 591000M HYM591000M HY531000J HYM591000

    HYM591

    Abstract: HY531000J
    Text: HYUNDAI 3 TE ELECTRONICS D • 4 b 7 S 0 fifl 0 0 0 0 3 *1 0 S «HYN K P ^ '^ V 'O m m M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin


    OCR Scan     		PDF M431201A-APR91 HYM591000 HY531000J 22jiF HYM591000M HYM591000P HYM591000M/P-60 HYM591000M/P-70 HYM591000M/P-80 HYM591000M/P-10 HYM591

    HYM591000B

    Abstract: No abstract text available
    Text: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is


    OCR Scan     		PDF HYM591000B HY514400A HY531000A HYM591000BM/BLM BB06-00-M 1BB06-00-M 1BB06-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y M 5 9 1 6 1 0 SEMICONDUCTOR 16M X S e r ie s 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOF-II on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591610 HY5117100 HYM591610M/LM/TM/LTM HYM591610M/LM HYMS91610TM/LTM 1BD04-00-MAY93 HYM591610M HYM591610LM HYM591610TM

    HY5118160JC

    Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
    Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM


    OCR Scan     		PDF HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W

    Untitled

    Abstract: No abstract text available
    Text: Hyundai SEM IC O N D U C TO R HYM591000 im x9-bíí cmos dram module M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin


    OCR Scan     		PDF HYM591000 M431201A-APR91 HYM591000 HY531000J HYM591000M HYM591000P HYM591000M/P-60 HYM591000M/P-70 HYM591000M/P-80

    HYM591000

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM591000 HY531000 HYM591000M 40nsffl 1BB02-12-MAY93 000175b 4b750flfl

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM591000B Seríes 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is


    OCR Scan     		PDF HYM591000B HY514400A HY531000A HYM591000BM/BLM BB06-00-M 1-274/-0-0ai 29MAX.

    D-0300

    Abstract: No abstract text available
    Text: “H Y U N D A I SEMICONDUCTOR H Y M 591600 S e r ie s 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22\iF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591600 HY5116100 22\iF HYM591600M/LM/TM/LTM 1BD03-00-MAY93 HYM591600M/LM HYM591600TM/LTM D-0300