HY57V654020
Abstract: Hyundai Semiconductor dram 875mil
Text: HY57V654020 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of
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HY57V654020
HY57V654020
864-bit
304x8.
1SE16-10-SEP97.
Hyundai Semiconductor dram
875mil
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hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
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256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
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hy57v168010a
Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part
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16M-bit
HY57V16401OATC
HY57V164010ALTC
HY57V16801
HY57V168010ALTC
HY57V161610ATC
HY57V161610ALTC
64M-bit
HY57V644010TC
HY57V644020TC
hy57v168010a
HY57V164010
TSOPII
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10d01
Abstract: No abstract text available
Text: -«Y U H D «! > -• HY57V654020 4 Banks x 4 U x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 6 7,108,864-bit CMOS Synchronous DRAM ideally suited for the main memory appli cations which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of
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HY57V654020
864-bit
304x8.
10d01
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Untitled
Abstract: No abstract text available
Text: u V I I u n It • • ‘M T U N D A 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 I PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL
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16Mx4
HY57V644010/
HY57V644020/
HY57V654010/
HY57V654020
HY57V644011/
HY57V644021/
HY57V654011/
HY57V654021
HY57V644010
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Untitled
Abstract: No abstract text available
Text: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL
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HY57V644010
HY57V644020
HY57V654010
HY57V654020
HY57V644011
HY57V644021
HY57V654011
HY57V654021
16Mx4
HY57V644010/
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HY57V16161
Abstract: hy57v168010b 1MX16BIT 4MX16
Text: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram
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HY57V41610TC---------------------
256Kx16-bit,
16M-bit
HY57V16401O
--------HY57V168010BTC-------------------
-------------------------------HY57V16161
-------------------1Mx16-bit,
64M-bit
HY5DV654023TC--------------------
HY57V16161
hy57v168010b
1MX16BIT
4MX16
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HY57V161610TC
Abstract: No abstract text available
Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC
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16Mbit
HY57V164010TC
HY57V168010TC
HY57V161610TC
HY57V644010TC
HY57V644020TC
HY57V654010TC
HY57V654020TC
Y57V64401IT
HY57V644/125/100
HY57V161610TC
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