HY57V654010
Abstract: RA12 875mil
Text: HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654010 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010 is organized as 2banks of
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HY57V654010
HY57V654010
864-bit
608x4.
1SE15-10-SEP97.
RA12
875mil
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96ns
Abstract: No abstract text available
Text: HY57V654010A 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654010A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010A is organized as 2banks of
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HY57V654010A
HY57V654010A
864-bit
608x4.
1SE34-11-MAR98.
400mil
54pin
96ns
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BYTE18
Abstract: BYTE65 HYM7V75AS1601ATNG
Text: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt
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16Mx72
PC/100
16Mx4
HYM7V75AS1600A/
HYM7V75AS1601A/
HYM7V75AS1630A/
HYM7V75AS1631A
75AS1601A/
75AS1630A/
BYTE18
BYTE65
HYM7V75AS1601ATNG
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Untitled
Abstract: No abstract text available
Text: -H Y U N D A I - • H Y 57V 054O1OA 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010A is a 67,108,864-bit C M O S Synchronous D RA M , ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010A is organized a s 2banks of
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57V654010A
864-bit
HY57V654010A
608x4.
HY57V65401
400mil
54pin
2J27I8J7K
150fg
1SE34-
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Untitled
Abstract: No abstract text available
Text: u V I I u n It • • ‘M T U N D A 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 I PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL
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16Mx4
HY57V644010/
HY57V644020/
HY57V654010/
HY57V654020
HY57V644011/
HY57V644021/
HY57V654011/
HY57V654021
HY57V644010
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Untitled
Abstract: No abstract text available
Text: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL
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HY57V644010
HY57V644020
HY57V654010
HY57V654020
HY57V644011
HY57V644021
HY57V654011
HY57V654021
16Mx4
HY57V644010/
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Untitled
Abstract: No abstract text available
Text: "H Y U N D A I - • HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010 is a 6 7 ,1 0 8 ,864-bit C M O S Synchronous D RA M ideally suited for the main memory appli cations which require large memory density and high bandwidth. H Y 57V654010 is organized as 2banks of
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HY57V654010
57V654010
864-bit
608x4.
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hy57v168010a
Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
Text: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.
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16M-bit
1Mx16-bit
Y57V164010A
HY57V168010A
HY57V161610A
7V651610
HY57V651620
HY57V644021
HY57V654021
HY57V648021
Y57V
HY57V641620
HY57V641621
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hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
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256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
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hy57v168010a
Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part
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16M-bit
HY57V16401OATC
HY57V164010ALTC
HY57V16801
HY57V168010ALTC
HY57V161610ATC
HY57V161610ALTC
64M-bit
HY57V644010TC
HY57V644020TC
hy57v168010a
HY57V164010
TSOPII
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HY57V168
Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
Text: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG
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168Pin
HYM7V641OOTRG
HYM7V64100BTRG
HYM7V6420
8/10P/10S
8/10P/t0S
HYM7V64200BTRG
HYM7V64200TFG
HYM7V64200BTFG
HYM7V65200CLTFG
HY57V168
hy57v168010b
hym7v64200
hy57v168010a
HYM7V64400
HYM7V64400TFG
PC100
HYM7V65400
pc66
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HYM7V75AS1601
Abstract: No abstract text available
Text: - H Y U N D A I ^16MX72 BIT SDRAM “INTEL” REGISTERED DIMM N-SERIES with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K Refresh HYM7V75AS1600A/ HYM7V75AS1601 A/ HYM7V75AS1630A/ HYM7V75AS1631A PRELIMINARY DESCRIPTION
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16MX72
PC/100
16Mx4
HYM7V75AS1600A/
HYM7V75AS1601
HYM7V75AS1630A/
HYM7V75AS1631A
75AS1601A/
75AS1630A/
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HY57V161610TC
Abstract: No abstract text available
Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC
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16Mbit
HY57V164010TC
HY57V168010TC
HY57V161610TC
HY57V644010TC
HY57V644020TC
HY57V654010TC
HY57V654020TC
Y57V64401IT
HY57V644/125/100
HY57V161610TC
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