HY57V654010
Abstract: RA12 875mil
Text: HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654010 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010 is organized as 2banks of
|
Original
|
HY57V654010
HY57V654010
864-bit
608x4.
1SE15-10-SEP97.
RA12
875mil
|
PDF
|
hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
|
OCR Scan
|
256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
|
PDF
|
hy57v168010a
Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part
|
OCR Scan
|
16M-bit
HY57V16401OATC
HY57V164010ALTC
HY57V16801
HY57V168010ALTC
HY57V161610ATC
HY57V161610ALTC
64M-bit
HY57V644010TC
HY57V644020TC
hy57v168010a
HY57V164010
TSOPII
|
PDF
|
Untitled
Abstract: No abstract text available
Text: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL
|
OCR Scan
|
HY57V644010
HY57V644020
HY57V654010
HY57V654020
HY57V644011
HY57V644021
HY57V654011
HY57V654021
16Mx4
HY57V644010/
|
PDF
|
Untitled
Abstract: No abstract text available
Text: "H Y U N D A I - • HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010 is a 6 7 ,1 0 8 ,864-bit C M O S Synchronous D RA M ideally suited for the main memory appli cations which require large memory density and high bandwidth. H Y 57V654010 is organized as 2banks of
|
OCR Scan
|
HY57V654010
57V654010
864-bit
608x4.
|
PDF
|
HY57V161610TC
Abstract: No abstract text available
Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC
|
OCR Scan
|
16Mbit
HY57V164010TC
HY57V168010TC
HY57V161610TC
HY57V644010TC
HY57V644020TC
HY57V654010TC
HY57V654020TC
Y57V64401IT
HY57V644/125/100
HY57V161610TC
|
PDF
|