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    0235

    Abstract: No abstract text available
    Text: HY57V64420HGTP 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HGTP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HGTP is organized as 4banks of 4,194,304x4.


    Original     		PDF HY57V64420HGTP HY57V64420HGTP 864-bit 304x4. HY57V644020HGTP 400mil 54pin 0235

    Untitled

    Abstract: No abstract text available
    Text: HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4.


    Original     		PDF HY57V64420HG HY57V64420HG 864-bit 304x4. HY57V644020HG 400mil 54pin

    BYTE18

    Abstract: BYTE65 HYM7V75AS1601ATNG
    Text: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt


    Original     		PDF 16Mx72 PC/100 16Mx4 HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A 75AS1601A/ 75AS1630A/ BYTE18 BYTE65 HYM7V75AS1601ATNG

    Untitled

    Abstract: No abstract text available
    Text: HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4.


    Original     		PDF HY57V64420HG HY57V64420HG 864-bit 304x4. HY57V644020HG 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4.


    Original     		PDF HY57V64420HG HY57V64420HG 864-bit 304x4. HY57V644020HG 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: u V I I u n It • • ‘M T U N D A 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 I PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL


    OCR Scan     		PDF 16Mx4 HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 HY57V644010

    Untitled

    Abstract: No abstract text available
    Text: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL


    OCR Scan     		PDF HY57V644010 HY57V644020 HY57V654010 HY57V654020 HY57V644011 HY57V644021 HY57V654011 HY57V654021 16Mx4 HY57V644010/

    hy57v168010a

    Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
    Text: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.


    OCR Scan     		PDF 16M-bit 1Mx16-bit Y57V164010A HY57V168010A HY57V161610A 7V651610 HY57V651620 HY57V644021 HY57V654021 HY57V648021 Y57V HY57V641620 HY57V641621

    hy57v168010a

    Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
    Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part


    OCR Scan     		PDF 16M-bit HY57V16401OATC HY57V164010ALTC HY57V16801 HY57V168010ALTC HY57V161610ATC HY57V161610ALTC 64M-bit HY57V644010TC HY57V644020TC hy57v168010a HY57V164010 TSOPII

    Untitled

    Abstract: No abstract text available
    Text: HY57V64420HGT 16Mx4-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4.


    OCR Scan     		PDF HY57V64420HGT 16Mx4-bit, HY57V64420HG 864-bit 304x4. HY57V644020HG 400mil

    HY57V161610TC

    Abstract: No abstract text available
    Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC


    OCR Scan     		PDF 16Mbit HY57V164010TC HY57V168010TC HY57V161610TC HY57V644010TC HY57V644020TC HY57V654010TC HY57V654020TC Y57V64401IT HY57V644/125/100 HY57V161610TC