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    Abstract: s8m9
    Text: •HYUNDAI HY51V4400B Series 1M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY51V4400B TTL0/26 1AC12-00-MAY94 HY51V4400BJ HY51V4400BU HY51V4400BSU tractel s8m9