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Untitled Abstract: No abstract text available Text: •HYUNDAI HY51V4170B S e rie s 256K X 16-blt CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The HY51V4170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve	OCR Scan	PDF	HY51V4170B 16-blt 16-bit 400mil 40pin 40/44pin 72mW21 1AC22-00-MAY94
Untitled Abstract: No abstract text available Text: »HYUNDAI HY51V4170B Series 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The HY51V4170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM O S process technology and advanced circuit design technique to achieve	OCR Scan	PDF	HY51V4170B 256KX 16-bit 400mil 40pin 40/44pin 1AC22-00-MAY94
r4kf Abstract: HY53C464LS fr4k HY53C256LS HY531000J Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S	OCR Scan	PDF	256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J
HY5118160 Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE	OCR Scan	PDF	256K-bits HY53C256. HY53C464 HY531000. DB101-20-MAY94 HY5118160 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit