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    HUF75321D3S Price and Stock

    onsemi HUF75321D3ST

    MOSFET N-CH 55V 20A TO252AA
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    DigiKey HUF75321D3ST Cut Tape 3,307 1
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    HUF75321D3ST Digi-Reel 3,307 1
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    HUF75321D3ST Reel 2,500 2,500
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    Avnet Americas HUF75321D3ST Reel 0 Weeks, 2 Days 1,786
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    Mouser Electronics HUF75321D3ST 2,519
    • 1 $0.78
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    Arrow Electronics HUF75321D3ST 112,500 1
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    HUF75321D3ST 30,000 16 Weeks 2,500
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    HUF75321D3ST Cut Strips 750 16 Weeks 1
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    Newark HUF75321D3ST Reel 2,500
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    Onlinecomponents.com HUF75321D3ST
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    Rochester Electronics HUF75321D3ST 10,982 1
    • 1 $0.3996
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    Richardson RFPD HUF75321D3ST 2,500
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    Avnet Silica HUF75321D3ST 17 Weeks 2,500
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    EBV Elektronik HUF75321D3ST 18 Weeks 2,500
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    Flip Electronics HUF75321D3ST 1,921
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    Rochester Electronics LLC HUF75321D3S

    MOSFET N-CH 55V 20A TO252AA
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    DigiKey HUF75321D3S Tube 1,733 701
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    onsemi HUF75321D3S

    MOSFET N-CH 55V 20A TO252AA
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    DigiKey HUF75321D3S Tube
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    Chip-Germany GmbH HUF75321D3S 2,130
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    Aptina Imaging HUF75321D3ST

    Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
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    Verical HUF75321D3ST 30,000 2,500
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    HUF75321D3ST 750 17
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    Fairchild Semiconductor Corporation HUF75321D3ST

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    Bristol Electronics HUF75321D3ST 6,638
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    HUF75321D3ST 933
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    HUF75321D3ST 133
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    Quest Components HUF75321D3ST 746
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    • 100 $0.637
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    Rochester Electronics HUF75321D3ST 5 1
    • 1 $0.3996
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    • 100 $0.3756
    • 1000 $0.3397
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    ComSIT USA HUF75321D3ST 2,720
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    HUF75321D3S Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75321D3S Fairchild Semiconductor 20A, 55V, 0.036 ?, N-Channel UltraFET Power MOSF Original PDF
    HUF75321D3S Fairchild Semiconductor 20A, 55V, 0.036 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75321D3S Harris Semiconductor 20A, 55V, 0.032 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75321D3S Intersil 20A, 55V, 0.036 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75321D3S_NL Fairchild Semiconductor 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75321D3ST Fairchild Semiconductor 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75321D3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75321D3ST_NL Fairchild Semiconductor 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs Original PDF

    HUF75321D3S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75321D3ST

    Saber

    Abstract: 75321D AN7254 AN9321 AN9322 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334
    Text: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75321D3, HUF75321D3S Saber 75321D AN7254 AN9321 AN9322 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334

    HUF75321D3

    Abstract: 75321D AN9321 HUF75321D3S HUF75321D3ST TA75321 TB334
    Text: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75321D3, HUF75321D3S 49e-1 61e-2 HUF75321D 10e-3 72e-2 67e-2 30e-1 HUF75321D3 75321D AN9321 HUF75321D3S HUF75321D3ST TA75321 TB334

    an7254

    Abstract: 75321D AN9321 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334 110E3
    Text: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75321D3, HUF75321D3S an7254 75321D AN9321 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334 110E3

    Untitled

    Abstract: No abstract text available
    Text: HUF75321D3ST Data Sheet N-Channel UltraFET Power MOSFET 55 V, 20 A, 36 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


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    PDF HUF75321D3ST HUF75321D3ST

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


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    PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    130E2

    Abstract: 75321D AN7254 AN9321 AN9322 HUF75321 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321
    Text: HUF75321D3, HUF75321D3S S E M I C O N D U C T O R 20A, 55V, 0.032 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 20A, 55V The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


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    PDF HUF75321D3, HUF75321D3S HUF75321 1-800-4-HARRIS 130E2 75321D AN7254 AN9321 AN9322 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321

    TA75321

    Abstract: transistor 75321D 75321D AN9321 HUF75321D3 HUF75321D3S HUF75321D3ST TB334
    Text: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75321D3, HUF75321D3S TA75321 transistor 75321D 75321D AN9321 HUF75321D3 HUF75321D3S HUF75321D3ST TB334

    AN7254

    Abstract: AN7260 AN9321 AN9322 HUF75321D3ST TA75321 TB334
    Text: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75321D3ST AN7254 AN7260 AN9321 AN9322 HUF75321D3ST TA75321 TB334

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


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    PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


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    PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


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    PDF HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S

    IGBT DRIVER ignition coil automotive

    Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
    Text: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of


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    PDF HUF75639P3, HUF75639S3S HUF75637P3, HUF75637S3S HUF75631P3 HUF75623P3 FN4477 FN4721 FN4720 FN4804 IGBT DRIVER ignition coil automotive mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


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    PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


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    PDF RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


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    PDF 0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference

    Untitled

    Abstract: No abstract text available
    Text: in terd i HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N -Channel U ltraFET Power MOSFETs These N-Channel power M O SFETs u m are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75321D3, HUF75321D3S AN7254 AN7260.

    75321D

    Abstract: d3s diode DIODE D3S 90 430E1
    Text: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75321D3, HUF75321D3S TA75322 72e-2 67e-2 30e-1 49e-1 HUF75321D 10e-3 75321D d3s diode DIODE D3S 90 430E1

    Untitled

    Abstract: No abstract text available
    Text: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75321D3, HUF75321D3S HUF75321D 10e-3 72e-2 67e-2 30e-1 49e-1