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    HIPERFETTM POWER MOSFET Search Results

    HIPERFETTM POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    HIPERFETTM POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode 2000 IXYS All rights reserved C1 - 1


    Original     		PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    ZVT full bridge for welding

    Abstract: ZVT full bridge arc welding rectifier ixfn56n90p IXFR zvt mosfet full bridge Ac/dc IXFV18N90P IXFV18N90PS IXFH18N90P ixfn*56N90P
    Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F 900V Polar HiPerFETTM Power MOSFETs rugged, energy efficient mosfet solutions for power conversion systems january 2010 OVERVIEW IXYS expands its Polar HiPerFETTM MOSFET product portfolio with the introduction of its new 900V


    Original     		PDF E153432) com/IXAN0022 PBN90POLARHIPERFET ZVT full bridge for welding ZVT full bridge arc welding rectifier ixfn56n90p IXFR zvt mosfet full bridge Ac/dc IXFV18N90P IXFV18N90PS IXFH18N90P ixfn*56N90P

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFB110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   600V 110A  56m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB110N60P3 250ns PLUS264TM 110N60P3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFB132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   500V 132A  39m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB132N50P3 250ns PLUS264TM 15NanoCoulombs 132N50P3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information VDSS ID25 IXFP5N100PM PolarTM HiPerFETTM Power MOSFET RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.3A Ω ≤ 2.8Ω OVERMOLDED (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFP5N100PM 5N100P 7-13-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFETs VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS


    Original     		PDF IXFK520N075T2 IXFX520N075T2 O-264 520N075T2

    IXFZ520N075T2

    Abstract: No abstract text available
    Text: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings


    Original     		PDF IXFZ520N075T2 DE475 IXFZ520N075T2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR44N50Q3 250ns ISOPLUS247 E153432 44N50Q3

    32N80Q3

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR32N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 800V 24A Ω 300mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR32N80Q3 300ns ISOPLUS247 E153432 32N80Q3

    IXFR48N60Q3

    Abstract: 6V01
    Text: Advance Technical Information IXFR48N60Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 32A Ω 154mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR48N60Q3 300ns ISOPLUS247 E153432 48N60Q3 IXFR48N60Q3 6V01

    W6 13A Diode

    Abstract: IXFA26N50P3 IXFQ26N50 IXFP26N50 ixfh26n50p3
    Text: Advance Technical Information IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 500V = 26A Ω ≤ 230mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) TO-220AB (IXFP)


    Original     		PDF O-263 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 O-220AB O-247 O-220 W6 13A Diode IXFQ26N50 IXFP26N50 ixfh26n50p3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 = 500V = 26A   240m RDS on TO-220AB (IXFP) TO-263 AA (IXFA)


    Original     		PDF IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 O-220AB O-263 O-247 O-220

    132N50P3

    Abstract: 66a 017
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFL132N50P3 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 500V 63A Ω 43mΩ 250ns ISOPLUS264 Symbol Test Conditions


    Original     		PDF IXFL132N50P3 250ns ISOPLUS264 132N50P3 66a 017

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR44N50Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR44N50Q3 250ns ISOPLUS247 E153432 44N50Q3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR24N100Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 18A Ω 490mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR24N100Q3 300ns ISOPLUS247 E153432 150orward-Bias 24N100Q3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N30P3 RDS on trr = = ≤ ≤ 300V 210A Ω 14.5mΩ 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFB210N30P3 250ns PLUS264TM 100ms 210N30P3

    IXFK520N075T2

    Abstract: 7v150 IXFX520N075T2 PLUS247
    Text: Advance Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFK520N075T2 IXFX520N075T2 O-264 520N075T2 IXFK520N075T2 7v150 IXFX520N075T2 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Polar3TM HiPerFETTM Power MOSFET IXFL210N30P3 VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   300V 108A  16m 250ns ISOPLUS264 Symbol Test Conditions


    Original     		PDF IXFL210N30P3 250ns ISOPLUS264 100ms 210N30P3

    MMIX1F520N075T2

    Abstract: IXFZ520N075T2 ixfz520n075
    Text: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F520N075T2 IXFZ520N075T2 MMIX1F520N075T2 IXFZ520N075T2 ixfz520n075

    IXFR44N50Q3

    Abstract: 44N50Q3
    Text: Preliminary Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR44N50Q3 250ns ISOPLUS247 E153432 44N50Q3 IXFR44N50Q3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFB210N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   300V 210A  14.5m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB210N30P3 250ns PLUS264TM 100ms 210N30P3

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P

    IXFB110N60P3

    Abstract: No abstract text available
    Text: Advance Technical Information IXFB110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 600V 110A Ω 56mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFB110N60P3 250ns PLUS264TM 110N60P3 IXFB110N60P3