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    IXFR Price and Stock

    Littelfuse Inc IXFR140N20P

    MOSFET N-CH 200V 90A ISOPLUS247
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    DigiKey IXFR140N20P Tube 4,667 1
    • 1 $13.6
    • 10 $13.6
    • 100 $10.75733
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    Littelfuse Inc IXFR44N80P

    MOSFET N-CH 800V 25A ISOPLUS247
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    DigiKey IXFR44N80P Tube 330 1
    • 1 $20.95
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    Newark IXFR44N80P Bulk 300
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    • 1000 $14.61
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    Littelfuse Inc IXFR44N50P

    MOSFET N-CH 500V 24A ISOPLUS247
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    DigiKey IXFR44N50P Tube 289 1
    • 1 $11.41
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    • 100 $8.63567
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    Newark IXFR44N50P Bulk 300
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    • 1000 $9.05
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    Littelfuse Inc IXFR36N60P

    MOSFET N-CH 600V 20A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR36N60P Tube 268 1
    • 1 $9.98
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    • 100 $8.63567
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    Littelfuse Inc IXFR80N50Q3

    MOSFET N-CH 500V 50A ISOPLUS247
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    DigiKey IXFR80N50Q3 Tube 192 1
    • 1 $22.83
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    IXFR Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFR100N25 IXYS 250V HiPerFET power MOSFET Original PDF
    IXFR102N30P IXYS PolarHT HiPerFET Power MOSFET Original PDF
    IXFR10N100F IXYS N-channel Power MOSFETs Original PDF
    IXFR10N100Q IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFR120N20 IXYS 200V HiPerFET power MOSFET Original PDF
    IXFR120N25P IXYS PolarHT HiPerFET Power MOSFET Original PDF
    IXFR12N100F IXYS N-channel Power MOSFETs Original PDF
    IXFR12N100Q IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFR140N20P IXYS PolarHT HiPerFET Power MOSFET ISOPLUS247 Original PDF
    IXFR140N30P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 70A ISOPLUS247 Original PDF
    IXFR14N100Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFR150N15 IXYS 150V HiPerFET power MOSFET Original PDF
    IXFR15N100Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A ISOPLUS247 Original PDF
    IXFR15N80Q IXYS 800V HiPerFET power MOSFET Original PDF
    IXFR16N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A ISOPLUS247 Original PDF
    IXFR180N06 IXYS 180V HiPerFET power MOSFET Original PDF
    IXFR180N07 IXYS 100V HiPerFET power MOSFET Original PDF
    IXFR180N07 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 70V 180A ISOPLUS247 Original PDF
    IXFR180N085 IXYS 85V HiPerFET power MOSFET Original PDF
    IXFR180N10 IXYS 100V HiPerFET power MOSFET Original PDF

    IXFR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24N50

    Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF 26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50

    50n50

    Abstract: 55N50 150N50 IXFK55N50
    Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR


    Original     		PDF ISOPLUS247TM 50N50 55N50 247TM IXFK55N50 50N50 55N50 150N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet


    Original     		PDF 58N20Q ISOPLUS247TM 728B1

    150N15

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 150N15

    70N15

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 70N15 ISOPLUS247TM 250ns 70N15

    ISOPLUS247

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 102N30P ISOPLUS247

    4525G

    Abstract: ISOPLUS247
    Text: PolarHTTM HiPerFET IXFR 120N25P Power MOSFET VDSS = 250 V ID25 = 61 A Ω RDS on = 27 mΩ Electrically Isolated Tab N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 120N25P 4525G ISOPLUS247

    34N80

    Abstract: 34N8
    Text: IXFR 34N80 VDSS = 800 HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 RDS on = 0.24 (Electrically Isolated Backside) V A Ω trr ≤ 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; R GS = 1 MΩ


    Original     		PDF ISOPLUS247TM 34N80 247TM E153432 34N8

    IXFR140N30

    Abstract: No abstract text available
    Text: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode


    Original     		PDF 140N30P ISOPLUS247TM 405B2 IXFR140N30

    44N50

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 44N50P 405B2 44N50

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50

    44N50P

    Abstract: ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 44N50P ISOPLUS247TM 03-21-06-B 44N50P ISOPLUS247

    10N100

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt


    Original     		PDF 12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFR30N110P 300ns ISOPLUS247 E153432 30N110P

    30N50

    Abstract: IXFR32N50
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50

    80N60

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3 80N60

    I 508 V

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 24 A ≤ 200 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol


    Original     		PDF ISOPLUS247TM 36N50P I 508 V

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFR 150N15 VDSS = 150 HiPerFETTM Power MOSFETs ISOPLUS247TM V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 150N15 247TM

    40N50Q2

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET Q2-Class VDSS ID25 IXFR40N50Q2 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFR40N50Q2 250ns ISOPLUS247 E153432 40N50Q2 05-28-08-C 40N50Q2

    40n50

    Abstract: ISOPLUS247 IXFR40N50Q2 40N50Q2
    Text: HiPerFETTM Power MOSFET Q2-Class IXFR40N50Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFR40N50Q2 250ns ISOPLUS247 E153432 40N50Q2 05-28-08-C 40n50 ISOPLUS247 IXFR40N50Q2 40N50Q2

    64N50P

    Abstract: ISOPLUS247 IXFR64N50P 64N50 50NC50
    Text: IXFR64N50P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 37A Ω 95mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFR64N50P 200ns ISOPLUS247 E153432 64N50P ISOPLUS247 IXFR64N50P 64N50 50NC50

    IXFR140N30

    Abstract: IXFR140N30P ISOPLUS247 1M300
    Text: IXFR140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFR140N30P 200ns ISOPLUS247 E153432 140N30P 5-13-08-B IXFR140N30 IXFR140N30P ISOPLUS247 1M300

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt


    OCR Scan     		PDF ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100