IXFB100N50
Abstract: No abstract text available
Text: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFB100N50Q3
250ns
PLUS264TM
100N50Q3
IXFB100N50
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IXFB120N50P2
Abstract: No abstract text available
Text: IXFB120N50P2 Polar2TM HiPerFETTM Power MOSFET VDSS ID25 RDS on = 500V = 120A ≤ 43mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFB120N50P2
PLUS264TM
120N50P2
2-10-A
IXFB120N50P2
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Untitled
Abstract: No abstract text available
Text: LinearTM Power MOSFET w/ Extended FBSOA IXTB30N100L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 30A Ω 450mΩ G PLUS264TM S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTB30N100L
PLUS264TM
30N100L
11-27-12-B
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IXFB40N110P
Abstract: IXFB 40N110P 40n110p F40N
Text: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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IXFB40N110P
300ns
PLUS264TM
40N110P
3-28-08-A
IXFB40N110P
IXFB 40N110P
F40N
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IXFB80N50Q2
Abstract: 80N50Q2
Text: HiPerFETTM Power MOSFETs IXFB80N50Q2 VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFB80N50Q2
250ns
PLUS264TM(
80N50Q2
7-20-07-F
IXFB80N50Q2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFB210N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 300V 210A 14.5m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings
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IXFB210N30P3
250ns
PLUS264TM
100ms
210N30P3
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Untitled
Abstract: No abstract text available
Text: IXFB300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = 100V 300A 5.5m 200ns PLUS264TM Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M
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IXFB300N10P
200ns
PLUS264TM
100ms
300N10P
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT IXGB200N60B3 VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ 600 600 V V VGES
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IXGB200N60B3
IC110
183ns
PLUS264TM
200N60B3
8-08-A
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFB70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFB70N60Q2
250ns
PLUS264TM
70N60Q2
8-08-A
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on ≤ ≤ trr IXFB80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFB80N50Q2
250ns
PLUS264TM(
80N50Q2
7-20-07-F
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Untitled
Abstract: No abstract text available
Text: VDSS ID25 IXFB52N90P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 52A Ω 160mΩ 300ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFB52N90P
300ns
PLUS264TM
52N90P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings
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IXFB300N10P
200ns
PLUS264TM
100ms
300N10P
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Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
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IXFB210N20P
200ns
PLUS264TM
100ms
210N20P
5-10-A
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DS100341
Abstract: PLUS264TM
Text: Advance Technical Information IXFB62N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 800V 62A Ω 140mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFB62N80Q3
300ns
PLUS264TM
62N80Q3
DS100341
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Untitled
Abstract: No abstract text available
Text: LinearTM Power MOSFET w/Extended FBSOA VDSS ID25 IXTB62N50L RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTB62N50L
PLUS264TM
62N50L
11-04-11-B
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N30P3 RDS on trr = = ≤ ≤ 300V 210A Ω 14.5mΩ 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS
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IXFB210N30P3
250ns
PLUS264TM
100ms
210N30P3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFB110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 600V 110A 56m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings
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IXFB110N60P3
250ns
PLUS264TM
110N60P3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFB132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 500V 132A 39m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings
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IXFB132N50P3
250ns
PLUS264TM
15NanoCoulombs
132N50P3
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IXTB62N50L
Abstract: No abstract text available
Text: LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 62A ≤ 100mΩ Ω PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTB62N50L
PLUS264TM
62N50L
11-04-11-B
IXTB62N50L
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFB44N100Q3 RDS on trr = = ≤ ≤ 1000V 44A Ω 220mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFB44N100Q3
300ns
PLUS264TM
44N100Q3
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Untitled
Abstract: No abstract text available
Text: Polar2TM HiPerFETTM Power MOSFET VDSS ID25 IXFB120N50P2 RDS on = 500V = 120A ≤ 43mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFB120N50P2
PLUS264TM
120N50P2
2-10-A
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132N50P3
Abstract: IXFB132N50P3
Text: Advance Technical Information IXFB132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 500V 132A Ω 39mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS
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IXFB132N50P3
250ns
PLUS264TM
132N50P3
IXFB132N50P3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS = 1100V ID25 = 40A Ω RDS on ≤ 260mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings
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IXFB40N110P
300ns
PLUS264TM
40N110P
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IXFB
Abstract: IXFB70N60Q2
Text: IXFB70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFB70N60Q2
250ns
PLUS264TM
70N60Q2
8-08-A
IXFB
IXFB70N60Q2
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