IEC61204-3
Abstract: No abstract text available
Text: BTCPower TM HB75D-24 Series Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion 24Vin Dual Output 15/15A Half Bricks Description The HB75D-24 series of low cost DC/DC converters offer the different current levels and are comparable to existing
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HB75D-24
24Vin
15/15A
8-36V
UL1950.
42LFM
IEC61204-3
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HB75
Abstract: IEC61204-3 24-05N
Text: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion Technical Specification HB75-24 Series 24Vin 2.5, 3.3, 5.0, 12, 15, 24Vout 75W Description Features The HB75 Series of low cost half brick DC/DC converters are comparable to existing half-bricks. They
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HB75-24
24Vin
24Vout
8-36V
24Volts.
UL1950.
42LFM
HB75
IEC61204-3
24-05N
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HB75
Abstract: No abstract text available
Text: HB75 37.5 to 75 WATT WIDE INPUT DC/DC CONVERTERS SINGLE OUTPUT Features: l37.5W - 75 W Isolated Output lEfficiency to 85% l300KHz Switching Frequency l2:1 Input Range lRegulated Outputs MODEL NUMBER HB75-12S25 HB75-12S33 HB75-12S05 HB75-12S12 HB75-12S15 HB75-12S24
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l300KHz
HB75-12S25
HB75-12S33
HB75-12S05
HB75-12S12
HB75-12S15
HB75-12S24
HB75-24S25
HB75-24S33
HB75-24S05
HB75
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HB75
Abstract: IEC61204-3
Text: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion Technical Specification HB75-48 Series 48Vin 2.5, 3.3, 5.0, 12, 15, 24Vout 75W Description Features The HB75 Series of low cost half brick DC/DC converters are comparable to existing half-bricks. They
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PDF
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HB75-48
48Vin
24Vout
6-75V
24Volts.
UL1950.
42LFM
HB75
IEC61204-3
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IEC61204-3
Abstract: No abstract text available
Text: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion Technical Specification HB75-12 Series 12Vin 2.5, 3.3, 5.0, 12, 15, 24Vout 75W Description Features The HB75-12 Series of low cost half brick DC/DC converters are comparable to existing half-bricks. They
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Original
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PDF
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HB75-12
12Vin
24Vout
UL1950.
42LFM
IEC61204-3
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IEC61204-3
Abstract: No abstract text available
Text: BTCPower TM HB75D-48 Series Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion 48Vin Dual Output 15/15A Half Bricks Description The HB75D-48 series of low cost DC/DC converters offer the different current levels and are comparable to existing
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Original
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PDF
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HB75D-48
48Vin
15/15A
6-75V
UL1950.
42LFM
IEC61204-3
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btcpower
Abstract: IEC61204-3
Text: BTCPower TM Broadband TelCom Power, Inc. HB75D Series Redefining “Current” Limits In Power Conversion Dual Output 15/15A Half Bricks Description The HB75D series of low cost DC/DC converters offer the different current levels and are comparable to existing
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HB75D
15/15A
8-36V
6-75V
btcpower
IEC61204-3
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IEC61204-3
Abstract: 1212n 10a15a HB50-12-05 HB50-12-12 HB50-12-25 HB50-12-33
Text: BTCPower TM Broadband TelCom Power, Inc. HB 12 Series Redefining “Current” Limits In Power Conversion Up to 15A Low Cost Half Bricks Description The HB 12 series of low cost DC/DC converters offer the different current levels and are comparable to existing
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SM980
Abstract: No abstract text available
Text: Products & Services 2015 FIBERCORE FIBERCORE Contents SECTION SECTION PAGE 1 About Fibercore Which fiber for which application? 6 - 11 2 SM Fiber for Harsh Environments, Ultra Bend Insensitive, RGB and Near Infra Red SM Fiber For Visible RGB Through To Near IR
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10685-B
SM980
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Untitled
Abstract: No abstract text available
Text: HB50 & HB75 Series 50 - 75 Watt High Density Efficiency typ. 84% @ 5V / 15A Power Density 27.4 W/in3 Constant Frequency Industry Standard Pinout Metal Base Plate 34 - 75 Input Voltage Range Remote Sense Remote on/off Output Voltage Adjustable ±10% Thermal Shutdown
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721 KXC
Abstract: moc 3048
Text: «HYUNDAI H Y 6 2 V 8 1 0 0 A 128K S e r ie s CMOS SRAM X 8 -b it PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131.072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that
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HY62V8100A
128Kx
55/70/85/100ns
-100/120/150/200ns
t00-H
792e0
1DD04-11-MAY95
721 KXC
moc 3048
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LD33
Abstract: ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70
Text: HY6264A Series ‘H YU N D AI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability process coupled with innovative circuit
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HY6264A
70/85/100/120ns
330mil
1270J
1DB01-11-MAY95
HY6264AP
LD33
ld33 c
LD33 F
LD33 V
HY6264ALP70
LD33 e
LD33 voltage
1DB01
HY6264ALJ-70
Hy6264alp-70
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DML D01
Abstract: No abstract text available
Text: HYUNDAI HY514810B Series 5 1 2 K x 8 - b it C M O S DRAM w ith W r ite -P e r - B II PRELIMINARY DESCRIPTION The HY51481 OB is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51481 OB utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514810B
HY51481
1AC19-00-MAY94
HY514810BJC
HY514810BUC
HY514810BSUC
HY514810BTC
DML D01
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Untitled
Abstract: No abstract text available
Text: H Y 6 7 V 1 8 1 1 0 /1 1 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM -HYUNDAI PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad dress counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .
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486/Pentium
20ns/25ns/30ns
40MHz
00DbP77
1DH04-11-MAY95
HY67V18110/111
HY67V18110C
HY67V18111C
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Untitled
Abstract: No abstract text available
Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400A
HY51V16400A
HY51V16400Ato
4b75Dfifl
1AD31-00-MAY95
0QG441D
HY51V16400AJ
HY51V16400ASU
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 j.F
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HYM5V64124A
64-bit
HY51V18164B
HYM5V64124ARG/ATRG/ASLRG/ASLTRG
DQ0-DQ63)
62K1S
0157MOO)
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hy5118164b
Abstract: No abstract text available
Text: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5118164B
16-bit
16-bit.
HV5118164B
12Cjj^
Q004fiBS
1AD58-10-MAY95
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Untitled
Abstract: No abstract text available
Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands
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HY29F200T/B
HY29F200
16-Bit)
G-70I,
T-70I
R-701
G-70E,
T-70E,
R-70E
G-90I
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Untitled
Abstract: No abstract text available
Text: mH Y II N U It I A 1 V I I U I I B I 4 M x 1 6 b it S y n c h r o n o u s D R A M S e r ie s HY57V641610/ HY57V641620/ HY57V651610/ HY57V651620 HY57V641611/ HY57V641621/ HY57V651611/ HY57V651621 PRELIMINARY DESCRIPTION HY57V641610 2Mbit X 2bank x 16 I/O, LVTTL
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HY57V641610/
HY57V641620/
HY57V651610/
HY57V651620
HY57V641611/
HY57V641621/
HY57V651611/
HY57V651621
HY57V641610
HY57V641620
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HY51V16404B
Abstract: HY51V16404BR60 si17 MH-750
Text: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION TheHY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY51V16404B
TheHY51V16404B
1AD51
-10-MAY95
4b75Dflfl
HY51V16404BJ
HY51V16404BSLJ
HY51V16404BR60
si17
MH-750
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P55i
Abstract: B0000h-BFFFF
Text: • HYUNDAI HY29F800 Series 1M x 8-bit / 512K x 16-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V 1 10% Read, Program, and Erase - Minimizes syslem-level power requirements • Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and
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16Kbytes,
HY29F800
16-bit
16-bit)
P-55I,
T-55I,
R-551
P-55E,
T-55E,
P55i
B0000h-BFFFF
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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Untitled
Abstract: No abstract text available
Text: HY HYUNDAI 514403B Series 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,
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514403B
HY514403B
4b75Gfifi
1AC15-10-MAY95
HY514403BJ
HY514403BLJ
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Untitled
Abstract: No abstract text available
Text: HYM532414A M-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^decoupling capacitors are mounted
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HYM532414A
32-bit
HY5117404A
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
HYM532414A
Hb75GÃ
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