Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5117400
1AD05-20-MAR94
4b750fifi
HY5117400JC
HY5117400UC
HY5117400TC
HY5117400LTC
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Untitled
Abstract: No abstract text available
Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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HY5216256
256Kx
16-bit
16bits
4b750Ã
1VC01-00-MAY95
525mil
64pin
4b750flÃ
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Untitled
Abstract: No abstract text available
Text: HY HYUNDAI 514403B Series 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,
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514403B
HY514403B
4b75Gfifi
1AC15-10-MAY95
HY514403BJ
HY514403BLJ
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM594000 Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000 is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.
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HYM594000
HY514100
22/iF
HYM594000M
1BC02-20-MAY93
251MAX.
1BC02-20-M
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RAS 0510
Abstract: RAS 0510 connection diagram
Text: HYUNDAI HY5117400 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY5117400
05-10-AP
HY5117400JC
HY5117400LJC
HY5117400TC
HY5117400LTC
RAS 0510
RAS 0510 connection diagram
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Untitled
Abstract: No abstract text available
Text: HY67V16100/101 »HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge
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HY67V16100/101
64Kx16
486/Pentium
7ns/12ns/17ns
67MHz
486/Pentium
1DH06-11-MAY9S
HY67V16100/101
1DH06-11-MAY95
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