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    H362 Search Results

    H362 Result Highlights (5)

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    SiT9005AI-12-33EH36.288000 SiTime 1 to 141 MHz, Spread-spectrum Oscillator Datasheet
    SiT9005AI-22-33EH36.288000 SiTime 1 to 141 MHz, Spread-spectrum Oscillator Datasheet
    SiT9005AI-12H33EH36.288000 SiTime 1 to 141 MHz, Spread-spectrum Oscillator Datasheet
    SiT9005AI-11-33EH36.288000 SiTime 1 to 141 MHz, Spread-spectrum Oscillator Datasheet
    SiT9005AIL12-33EH36.288000 SiTime 1 to 141 MHz, Spread-spectrum Oscillator Datasheet
    SF Impression Pixel

    H362 Price and Stock

    Murata Manufacturing Co Ltd GRM1885C1H362JA01D

    CAP CER 3600PF 50V C0G/NP0 0603
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    DigiKey GRM1885C1H362JA01D Reel 68,000 4,000
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    GRM1885C1H362JA01D Cut Tape 2,763 1
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    Mouser Electronics GRM1885C1H362JA01D 4,243
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    Bristol Electronics GRM1885C1H362JA01D 3,190
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    TME GRM1885C1H362JA01D 8,000 1
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    IBS Electronics GRM1885C1H362JA01D 140,000 52,411
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    Murata Manufacturing Co Ltd GCM1885C1H362FA16J

    CAP CER 3600PF 50V C0G/NP0 0603
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    DigiKey GCM1885C1H362FA16J Reel 10,000 10,000
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    Mouser Electronics GCM1885C1H362FA16J 22,822
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    TME GCM1885C1H362FA16J 10,000
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    Avnet Abacus GCM1885C1H362FA16J 19 Weeks 10,000
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    Murata Manufacturing Co Ltd GRM2165C1H362JA01D

    CAP CER 3600PF 50V C0G/NP0 0805
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    DigiKey GRM2165C1H362JA01D Cut Tape 3,706 1
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    Mouser Electronics GRM2165C1H362JA01D 7,223
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    Newark GRM2165C1H362JA01D Cut Tape 18,960 10
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    Avnet Abacus GRM2165C1H362JA01D 18 Weeks 4,000
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    GRM2165C1H362JA01D 90
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    KEMET Corporation C2220H362JGGAC7800

    CAP CER 3600PF 2KV C0G/NP0 2220
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    DigiKey C2220H362JGGAC7800 Reel 2,000 500
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    C2220H362JGGAC7800 Cut Tape 207 1
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    TTI C2220H362JGGAC7800 Reel 500 500
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    Hirose Electric Co Ltd FH36-29S-0.3SHW(99)

    CONN FPC BOTTOM 29POS 0.3MM R/A
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    DigiKey FH36-29S-0.3SHW(99) Cut Tape 310 1
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    Avnet Abacus FH36-29S-0.3SHW(99) 500
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    Find more H362 price and stock on Findchips.com

    H362 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    H-36-2 Bourns Accessories, Potentiometers, Variable Resistors, PANEL MOUNT ASSEMBLY HARDWARE Original PDF
    H362 Micro Commercial Components Diode Zener SINGLE 36.05V 2% 500MW 2DO-35 Original PDF
    H36-2 Micro Commercial Components Pd=500mW, Vz=36.05V zener diode Original PDF
    H362 Shenzhen Yongerjia Electronic Zener Diode Original PDF

    H362 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    BCP56

    Abstract: LM7805 PTFA190451E PTFA190451F RO4350
    Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,


    Original     		PDF PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2 BCP56 LM7805 RO4350

    AD6440

    Abstract: AD20MSP930 AD6449 TR328 ADSL modem schematics adsl modem working AD6437 AD8016 AD812 ADTSP-2183
    Text: AD20msp930 ADSL Chipset NEW ADSL CHIPSET IS FULLY INTEGRATED The AD20msp930 is a next-generation solution that can push the speed of data transmission over conventional telephone lines to 10 Mbps— 90 times faster than traditional ISDN and over 200 times faster than V.90


    Original     		PDF AD20msp930 AD20msp930. ADTSP2183. H3623-7 AD6440 AD6449 TR328 ADSL modem schematics adsl modem working AD6437 AD8016 AD812 ADTSP-2183

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    42756 regulator

    Abstract: 42756 C207 capacitor j146 1300 transistor
    Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PDF PTVA123501EC PTVA123501EC H-36248-2 42756 regulator 42756 C207 capacitor j146 1300 transistor

    LM7805

    Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
    Text: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in


    Original     		PDF PTFA082201E PTFA082201F PTFA082201E PTFA082201F 220-watt LM7805 elna 50v BCP56 RO4350

    ssy 1920

    Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
    Text: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,


    Original     		PDF PTFA191001E PTFA191001F PTFA191001E PTFA191001F 100-watt, IS-95 CDMA2000 H-36248-2 ssy 1920 LM 2931 AT 05 BCP56 LM7805

    ATC-600A

    Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350
    Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A BCP56 LM7805 RO4350

    a2324

    Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
    Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PDF PTFA192401E PTFA192401F PTFA192401E PTFA192401F 240-watt H-36260-2 H-37260-2 a2324 RF35 RO4350 BCP56 LM7805 PTFA192401F V4

    TL235

    Abstract: No abstract text available
    Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency


    Original     		PDF PTVA030121EA PTVA030121EA H-36265-2 TL235

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1

    Untitled

    Abstract: No abstract text available
    Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PDF PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt H-36248-2 H-37248-2

    C205

    Abstract: No abstract text available
    Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


    Original     		PDF PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    PTVA101K02EV

    Abstract: 1030-1090MHz
    Text: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.


    Original     		PDF PTVA101K02EV PTVA101K02EV H-36275-4 1030-1090MHz

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    2SA733AP

    Abstract: 2N3055B 2sc945b 2SA733A S8550D sa15tp TPT5609 MP1010B s8050d S9012H
    Text: MCC's EU RoHS and Green Halogen Antimony Free Parts List Package RoHS Compliant EU RoHS Exemption Code 1.5KE10-TP/AP/BP DO-201AE X 7a Matte Tin 1.5KE100-TP/AP/BP DO-201AE X 7a 1.5KE100A-TP/AP/BP DO-201AE X 1.5KE100C-TP/AP/BP DO-201AE 1.5KE100CA-TP/AP/BP


    Original     		PDF 5KE10-TP/AP/BP DO-201AE 5KE100-TP/AP/BP 5KE100A-TP/AP/BP 5KE100C-TP/AP/BP 5KE100CA-TP/AP/BP 2SA733AP 2N3055B 2sc945b 2SA733A S8550D sa15tp TPT5609 MP1010B s8050d S9012H

    PTFA212001E

    Abstract: ATC-600A PTFA212001F LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4
    Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212001E PTFA212001F PTFA212001E PTFA212001F 200-watt H-36260-2 H-37260-2 ATC-600A LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4

    C66065-A2326-C001-01-0027

    Abstract: transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PTFA070601E PTFA070601F
    Text: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770


    Original     		PDF PTFA070601E PTFA070601F PTFA070601E PTFA070601F 60-watt H-36265-2 H-37265-2 C66065-A2326-C001-01-0027 transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    H-38-2

    Abstract: M6 nut H-38-3 H-37-2 H-37-5 H-383 H-W09-MM H362
    Text: Hardware Selection Guide Panel control mounting hardware is determined by bushing style. The "X" in the bushing style column indicates what hardware is used with the bushing. Hardware indicated by a shaded area is normally supplied with unit. Other hardware may be ordered separately.


    Original     		PDF H-36-1 H-36-2 H-37-1 PTD90 PTV111 PTV142 PDA17 H-38-2 M6 nut H-38-3 H-37-2 H-37-5 H-383 H-W09-MM H362

    schneider LC1-D09 wiring diagram

    Abstract: Schneider LC1D18 wiring diagram MPSF23 HOM1632L200TCFT WIRING DIAGRAM lc1d32 HOM612L100 Square D Relay Class 8502 QOC20U100 QOC30U NQOD454L600
    Text: 2008 SQUARE D REF GUIDE Flip 0514.qxd SQUARE D INFORMATION RESOURCES Local Square D Sales Office: _ _ Square D Customer Information Center: 1-888-SQUARE D (1-888-778-2733) The 2008 Pocket Digest still contains Schneider Electric’s best selling catalog numbers from


    Original     		PDF 1-888-SQUARE 22-page schneider LC1-D09 wiring diagram Schneider LC1D18 wiring diagram MPSF23 HOM1632L200TCFT WIRING DIAGRAM lc1d32 HOM612L100 Square D Relay Class 8502 QOC20U100 QOC30U NQOD454L600

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    Untitled

    Abstract: No abstract text available
    Text: B ourns_ GENERAL INFORMATION Panel Controls Bourns Panel Controls TAPER DESCRIPTIONS Graph Models Taper Code Description Linearity T.R. Tol. 1 81,82,85,86,91 -99,3852,3856,3862,50 A Linear — Cermet ±5% Ind. ±10% 1 81,82,85,86,91 -99,3851,50


    OCR Scan     		PDF