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    PTVA123501EC Search Results

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    PTVA123501EC Price and Stock

    MACOM PTVA123501EC-V2-R0

    RF MOSFET LDMOS 50V H-36248-2
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    DigiKey PTVA123501EC-V2-R0 Cut Tape 32 1
    • 1 $364.29
    • 10 $341.526
    • 100 $324.45
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    PTVA123501EC-V2-R0 Digi-Reel 1
    • 1 $364.29
    • 10 $341.526
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    PTVA123501EC-V2-R0 Reel 50
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    Mouser Electronics PTVA123501EC-V2-R0
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    Richardson RFPD PTVA123501EC-V2-R0 1
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    Infineon Technologies AG PTVA123501ECV2XWSA1

    RF MOSFET LDMOS H-36248-2
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    DigiKey PTVA123501ECV2XWSA1 Tray
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    MACOM PTVA123501EC-V2-R250

    RF MOSFET LDMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTVA123501EC-V2-R250 Reel 250
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    • 1000 $295.9896
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    Mouser Electronics PTVA123501EC-V2-R250
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    Richardson RFPD PTVA123501EC-V2-R250 1
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    Infineon Technologies AG PTVA123501ECP2

    RF Components (Alt: SP001046596)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik PTVA123501ECP2 26 Weeks 1
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    PTVA123501EC Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTVA123501EC-V2-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36248-2 Original PDF
    PTVA123501ECV2R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36248-2 Original PDF
    PTVA123501EC-V2-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTVA123501ECV2R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTVA123501ECV2XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTVA123501EC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    42756 regulator

    Abstract: 42756 C207 capacitor j146 1300 transistor
    Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PDF PTVA123501EC PTVA123501EC H-36248-2 42756 regulator 42756 C207 capacitor j146 1300 transistor

    Untitled

    Abstract: No abstract text available
    Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original     		PDF PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2

    Untitled

    Abstract: No abstract text available
    Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original     		PDF PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2

    42756 regulator

    Abstract: No abstract text available
    Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power ampliier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PDF PTVA123501EC PTVA123501EC H-36248-2 42756 regulator

    Untitled

    Abstract: No abstract text available
    Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced


    Original     		PDF PTVA123501EC PTVA123501FC PTVA123501EC PTVA123501FC H-36248-2 H-37248-2

    PTVA123501EC

    Abstract: rfpower fet
    Text: Preliminary PTVA123501EC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.


    Original     		PDF PTVA123501EC PTVA123501EC H-36248-2 rfpower fet

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF