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    H 331 TRANSISTOR Search Results

    H 331 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    H 331 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TM4C1230E6PM

    Abstract: RTCC active smd semiconductor components marking codes 2014
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright


    Original     		PDF TM4C1230E6PM LM4F111E5QR) RTCC active smd semiconductor components marking codes 2014

    Untitled

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright


    Original     		PDF TM4C1230E6PM LM4F111E5QR)

    C67078-S3114-A2

    Abstract: No abstract text available
    Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		PDF O-218 C67078-S3114-A2 C67078-S3114-A2

    12S10

    Abstract: C67078-S3114-A2 331 transistor
    Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		PDF O-218 C67078-S3114-A2 12S10 C67078-S3114-A2 331 transistor

    XC6901D

    Abstract: XC6901 p-channel mosfet with diode sot89-5 ta1527 marking 005c
    Text: XC6901 Series ETR0343-005c 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.


    Original     		PDF XC6901 ETR0343-005c 200mA XC6901D p-channel mosfet with diode sot89-5 ta1527 marking 005c

    XC6901D331MR-G

    Abstract: XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G XC6901 03VVOUT2
    Text: XC6901 Series ETR03043-006 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.


    Original     		PDF XC6901 200mA ETR03043-006 XC6901D331MR-G XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G 03VVOUT2

    XC6902N

    Abstract: XC6902 C01 SOT23 ta1323
    Text: XC6902 Series ETR0363-002a -16V Input Three Terminal Negative Voltage Regulator •GENERAL DESCRIPTION The XC6902 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifiers, driver transistors, current limiters and phase compensators.


    Original     		PDF XC6902 ETR0363-002a 200mA XC6902N C01 SOT23 ta1323

    D F 331 TRANSISTOR

    Abstract: No abstract text available
    Text: SIEM ENS SM T Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code S F H 331 Q 62702-P1634 Wesentliche Merkmale • Geeignet für V apor-Phase Löten und IR-Reflow Löten


    OCR Scan     		PDF 62702-P1634 /pCE//pCE250 D F 331 TRANSISTOR

    philips bfq

    Abstract: BFQ263 BFQ263A RK 100
    Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with


    OCR Scan     		PDF BFQ263; BFQ263A 711062b 0045bi 711Qfl2b T-33-05 philips bfq BFQ263 BFQ263A RK 100

    BSP108

    Abstract: transistor marking ST4
    Text: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended


    OCR Scan     		PDF BSP108 OT223 BSP108 transistor marking ST4

    BC369

    Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
    Text: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.


    OCR Scan     		PDF D027S43 BC369 BC368/BC369 BC369 TRANSISTOR bH Silicon Epitaxial Planar Transistor philips

    C 331 Transistor

    Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
    Text: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.


    OCR Scan     		PDF O-116 14-lead C 331 Transistor transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331

    SDT9309

    Abstract: 2N3055 2N3055H SDT9302 SDT9301 2n3442 ic 331
    Text: -JFplitran [p[fiì ®l!D Tr ©ÄTTÄIL® Devices. Inc. SINGLE DIFFUSED NPN MESA TRANSISTORS Ü /MMÏÏ? K M DEVICE TYPE VCEO hpE ( VOLTS MIN/MAX ic (A Vc e (sat) MAX (V) (A) ic Isb PULSE VCE(V) Ic(A ) (sec) ÍT MIN (MHz) PT MAX (W) CASE CHIP TYPE TYPE


    OCR Scan     		PDF 2N3441 2N3054 SDT31303 SDT31305 SDT31307 10/S0 SDT9301 SDT9302 SDT9303 SDT9304 SDT9309 2N3055 2N3055H 2n3442 ic 331

    DF 331 TRANSISTOR

    Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		PDF O-218AA C67078-S3114-A2 00--------V O-218AA DF 331 TRANSISTOR D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor

    transistor B A O 331

    Abstract: D F 331 TRANSISTOR
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor Type BUZ 331 CO i • N channel • Enhancement mode • Avalanche rated 500 V Id Tc ^DS on Package 1> Ordering Code 8.0 A 35 ’C 0.8 Q TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-218 C67078-S3114-A2 SILO3821 transistor B A O 331 D F 331 TRANSISTOR

    sdt9303

    Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
    Text: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @


    OCR Scan     		PDF 2N3441 2N3054 2N6258 MIL-S19500/ 2N3055 2N3441 2N3442 2N3771 2N3772 sdt9303 2N3441 JAN 2N3772 SOLITRON

    lt 332 diode

    Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
    Text: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350


    OCR Scan     		PDF IRFF330/331/332/333 IRFF330 IRFF331 IRFF332 IRFF333 O-205AF lt 332 diode 4242 DM 4243 dm diode 331 t2235 QA-750

    IRF3303

    Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
    Text: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •


    OCR Scan     		PDF IRFF330, IRFF331, IRFF332, IRFF333 IRFF332 IRFF333 IFF33 IRF3303 OA 161 diode IRFF330 IRFF331

    2n4401 331

    Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
    Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2SA821S. 2SA830S. 2SA854S. 2SB822 2n4401 331 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B

    DF 331 TRANSISTOR

    Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR
    Text: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S


    OCR Scan     		PDF 0D02ST3 DF 331 TRANSISTOR transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR

    2N3773 equivalent

    Abstract: transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent
    Text: 8368602 SOL ITRON DEVICES re » ? ©atm,®® INC T5 95D DE | f l 3 h a t . 0 E • 02903 00 0 5 ^ 0 3 D □ ^Sww&rßik T~ I — " Devices, Ine MEDIUM VOLTAGE CHIP N U M BER IMPIM SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 31 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.


    OCR Scan     		PDF JAN2N3771, JAN2N3772, 2N3773. 2N4347, 2N4348, 2N6262 C-112 2N3773 equivalent transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent

    p331

    Abstract: SGSP130
    Text: S G S-THOMSON 07E D | 7 ^ 2 3 7 0Dl7fl07 b | _ 73C 1 7 3 0 4 _ O j T Z J - O y _ _ ê f. V ñ K W% i I 1 • SGSP13Ò/P13Ì/P132 ;] SGSP230/P231/P232 .4 SGSP330/P331/P332 - 1 N-CHÀNNEL POWER MOS TRANSISTORS & HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate


    OCR Scan     		PDF 0Dl7fl07 SGSP13Ã /P132 SGSP230/P231/P232 SGSP330/P331/P332 OT-82 O-220 SGSP130 SGSP230 SGSP330 p331 SGSP130

    MA4T64400

    Abstract: low noise transistors MA4T645 MA4T644
    Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t


    OCR Scan     		PDF A4T64400 MA4T64435 MA4T64433 OT-23 MA4T64539 OT-143 4T644X OT-143) MA4T64400 low noise transistors MA4T645 MA4T644

    transistor h 331

    Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
    Text: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten


    OCR Scan     		PDF Q62702-P1634 hotocurrent/pCE//pCE250 transistor h 331 D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led