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    5SDF08F4505

    Abstract: PULSE16
    Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


    Original     		PDF 08F4505 08F4505 08F4005 1768/138a, DM/201/06 Jul-10 5SDF08F4505 PULSE16

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


    Original     		PDF 04T4504 827C-360-45 04T4504 04T4004 1768/138a, DM/277/08 Jul-10

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


    Original     		PDF 04D4504 04D4504 04D4004 1768/138a, DM/219/06 Jul-10

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 06T3004 5SDF 06T3004 Old part no. DM 827C-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


    Original     		PDF 06T3004 827C-620-30 06T3004 06T2504 1768/138a, DM/276/08 Jul-10

    5SDF 08F4505

    Abstract: abb S 08f45
    Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807


    Original     		PDF 08F4505 1768/138a, DM/201/06a Aug-11 08F450A Aug-11 5SDF 08F4505 abb S 08f45

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


    Original     		PDF 08T4505 818C-800-45 08T4505 08T4005 1768/138a, DM/218/06 Jul-10

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


    Original     		PDF 12T3005 818C-1200-30 12T3005 12T2505 1768/138a, DM/266/08of DM/266/08 Jul-10

    5SDF12F3005

    Abstract: dm265
    Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


    Original     		PDF 12F3005 12F3005 12F2505 1768/138a, DM/265/08 Jul-10 5SDF12F3005 dm265

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


    Original     		PDF 06D3004 06D3004 06D2504 1768/138a, DM/267/08 Jul-10

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858


    Original     		PDF 04T4504 827C-360-45 1768/138a, DM/277/08a Aug-11 04T450A

    5SDF 12T2505

    Abstract: 5sDF12t2505
    Text: 5SDF 12T2505  5SDF 12T2505 Old part no. DM 818C-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications  suited for GTO applications  Snubber diode  Freewheeling diode Key Parameters


    Original     		PDF 12T2505 818C-1200-25 1768/138a, DM/266/08b Nov-12 Nov-12 5SDF 12T2505 5sDF12t2505

    5SDF 12F2505

    Abstract: 12F2505 dm265
    Text: 5SDF 12F2505  5SDF 12F2505 Old part no. DM 818-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications  suited for GTO applications  Snubber diode  Freewheeling diode Key Parameters


    Original     		PDF 12F2505 1768/138a, DM/265/08b Nov-12 Nov-12 12F2505 5SDF 12F2505 dm265

    5SDF06D2504

    Abstract: abb 800
    Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196


    Original     		PDF 06D2504 1768/138a, DM/267/08a Aug-11 06D250A Aug-11 5SDF06D2504 abb 800

    5SDF12F3005

    Abstract: dm265 12F3
    Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195


    Original     		PDF 12F3005 12F3005 12F2505 1768/138a, DM/265/08a Aug-11 Aug-11 5SDF12F3005 dm265 12F3

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858 rT


    Original     		PDF 04D4504 1768/138a, DM/219/06a Aug-11 04D4504A Aug-11

    06T2504

    Abstract: 5SDF06T2504
    Text: 5SDF 06T2504 5SDF 06T2504 Old part no. DM 827C-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196


    Original     		PDF 06T2504 827C-620-25 1768/138a, DM/276/08a Aug-11 06T25A 06T2504 5SDF06T2504

    5SDF 08T4505

    Abstract: No abstract text available
    Text: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807


    Original     		PDF 08T4505 818C-800-45 1768/138a, DM/218/06a Aug-11 08T45A 5SDF 08T4505

    ABB inverter motor fault code

    Abstract: Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits
    Text: f l à ALLEN-BRADLEY ^ 5 5 ^ A R O C K W E L L IN T E R N A T IO N A L C O M P A N Y Allen-Bradley 1352C-PIUS GTO Replacement and Installation Guide Kit Instructions GTO Replacement GTO Replacement Kits are available to provide an easy method of changing a


    OCR Scan     		PDF 1352C-PIUS 1352C-6 P/N146071 ABB inverter motor fault code Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits

    GTO thyristor

    Abstract: GTO ABB ABB GTO CSG THYRISTOR GTO GTO thyristor ABB abb ys thyristor CSG-601 THYRISTOR DE PUISSANCE 601-25-A ABB GTO
    Text: , A B B S E M I C O N D U C TORS Asymmetric GTO Thyristors AG 001bß3ö 0000036 1 B A B B _ _ 3 6 E J>. Asymmetrische GTO Thyristoren Free-floating silicon High-dynamic voltage capability at turn-off Low on-state and switching losses Coaxial gate leads soldered


    OCR Scan     		PDF Q000Q36 Vorm815 GTO thyristor GTO ABB ABB GTO CSG THYRISTOR GTO GTO thyristor ABB abb ys thyristor CSG-601 THYRISTOR DE PUISSANCE 601-25-A ABB GTO

    ABB thyristors

    Abstract: IGCT U15-16 thyristoren
    Text: S H O R T F O R M C A T A L O G U E High Power Sem iconductors 2 Q Q 0 Hochleistungshalbierter Contents Inhalt IGBTs IGBTs IG B T 6- 7 IGCTs IGCTs IG C T 8- 9 GTO Thyristors GTO Thyristoren G TO Phase Control Thyristors Netzthyristoren * BCTs BCTs BCT Fast Sw itching Thyristors


    OCR Scan     		PDF

    5SDD71B0200

    Abstract: stud type diodes ABB GTO R2501 08F4500 71B0200
    Text: Fast Recovery Diodes ABB Semiconductors AG I Optimized fast and soft turn-off. Small reverse recovery charge. High di/dt capability at turn-off. Range optimally suited for GTO applications. Type and ordering number Optimiertes schnelles und weiches Ausschaltverhalten.


    OCR Scan     		PDF VRRM/100V 01R2501 01R2502 001bfi3fl Fig-10 3x100 45x100 5SDD71B0200 stud type diodes ABB GTO R2501 08F4500 71B0200

    05D2500

    Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt­ G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.


    OCR Scan     		PDF 15F2502 5D25DQ 01R2501 01R2501 20H2501 05D2500 11F2500 01R25D1 25H25C1 GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV

    R2501

    Abstract: 01R25 71B0200 ABB GTO ci d 4800 r2503 5SDF01R2502 08F4500 b0200 5SDF
    Text: Fast Recovery Diodes ABB Semiconductors AG I O ptim ized fast and soft turn-off. Sm all reverse recovery charge. High di/dt capability at turn-off. Range optim ally suited for GTO applications. > T yp e and ordering num ber O ptim iertes schnelles und weiches


    OCR Scan     		PDF VRRM/100V 01R2501 5SDF01R2502 14urer 3x100 45x100 R2501 01R25 71B0200 ABB GTO ci d 4800 r2503 08F4500 b0200 5SDF

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan     		PDF 15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502