KA DIODE
Abstract: 5SPR 08F4500 08F45
Text: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 Doc. No. 5SYA 14PP-01 Oct. 01 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications
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08F4500
14PP-01
CH-5600
KA DIODE
5SPR 08F4500
08F45
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5SPR 08F4500
Abstract: 08F4500 08F45
Text: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0 V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications Very high di/dt capability
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08F4500
CH-5600
5SPR 08F4500
08F4500
08F45
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08F45
Abstract: 5SPY 08F4500 GATE DRIVER ABB
Text: VDRM VRRM IPULSE VDcmax = 4.5 kV = 18 V = 30 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPY 08F4500 • • • • • • • • • Features Asymmetric Design For single or repetitive pulse applications Very high di/dt capability
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08F4500
CH-5600
08F45
5SPY
08F4500
GATE DRIVER ABB
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ABB GTO
Abstract: stud type diodes fjs 500
Text: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.
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05D2501
11F2S01
45x100
ABB GTO
stud type diodes
fjs 500
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R2501
Abstract: 01R25 71B0200 ABB GTO ci d 4800 r2503 5SDF01R2502 08F4500 b0200 5SDF
Text: Fast Recovery Diodes ABB Semiconductors AG I O ptim ized fast and soft turn-off. Sm all reverse recovery charge. High di/dt capability at turn-off. Range optim ally suited for GTO applications. > T yp e and ordering num ber O ptim iertes schnelles und weiches
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VRRM/100V
01R2501
5SDF01R2502
14urer
3x100
45x100
R2501
01R25
71B0200
ABB GTO
ci d 4800
r2503
08F4500
b0200
5SDF
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05D2500
Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.
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15F2502
5D25DQ
01R2501
01R2501
20H2501
05D2500
11F2500
01R25D1
25H25C1
GTO ABB
GTO gate drive unit
ABB GTO gate unit
ABB GTO
30L2501
25H2501
05D250
5SDF
GTO 6.5 KV
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5SDD71B0200
Abstract: stud type diodes ABB GTO R2501 08F4500 71B0200
Text: Fast Recovery Diodes ABB Semiconductors AG I Optimized fast and soft turn-off. Small reverse recovery charge. High di/dt capability at turn-off. Range optimally suited for GTO applications. Type and ordering number Optimiertes schnelles und weiches Ausschaltverhalten.
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OCR Scan
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PDF
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VRRM/100V
01R2501
01R2502
001bfi3fl
Fig-10
3x100
45x100
5SDD71B0200
stud type diodes
ABB GTO
R2501
08F4500
71B0200
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