5SDF 12F2505
Abstract: 12F2505 dm265
Text: 5SDF 12F2505 5SDF 12F2505 Old part no. DM 818-1200-25 Fast Recovery Diode Properties • Optimized recovery characteristics • Industry standard housing Applications suited for GTO applications Snubber diode Freewheeling diode Key Parameters
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Original
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PDF
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12F2505
1768/138a,
DM/265/08b
Nov-12
Nov-12
12F2505
5SDF 12F2505
dm265
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5SDF12F3005
Abstract: dm265 12F3
Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195
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Original
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PDF
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12F3005
12F3005
12F2505
1768/138a,
DM/265/08a
Aug-11
Aug-11
5SDF12F3005
dm265
12F3
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5SGS 12F2500
Abstract: ABB Typ RGC ITGQM GTO thyristor ABB
Text: 5SGS 12F2500 5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630
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Original
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PDF
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12F2500
1768/138a,
TG/164/05b
Mar-12
5SGS 12F2500
ABB Typ RGC
ITGQM
GTO thyristor ABB
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Thyristor snubber
Abstract: No abstract text available
Text: 5SGS 12F3000 5SGS 12F3000 Old part no. TG 908-1200-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 200 I TAVm = 630 I TSM = 10 000
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Original
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PDF
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12F3000
12F3000
12F2500
1768/138a,
TG/164/05
Jul-10
Jul-10
Thyristor snubber
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Untitled
Abstract: No abstract text available
Text: 5SGS 16H3000 5SGS 16H3000 Old part no. TG 919-1600-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 600 I TAVm = 760 I TSM = 14 000
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Original
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PDF
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16H3000
16H3000
16H2500
1768/138a,
TG/170/05
Jul-10
Jul-10
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5SDF12F3005
Abstract: dm265
Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000
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Original
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PDF
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12F3005
12F3005
12F2505
1768/138a,
DM/265/08
Jul-10
5SDF12F3005
dm265
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5SGS 16H2500
Abstract: No abstract text available
Text: 5SGS 16H2500 5SGS 16H2500 Old part no. TG 919-1600-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 600 I TAVm = 760
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Original
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PDF
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16H2500
1768/138a,
TG/170/05a
Sep-11
5SGS 16H2500
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Untitled
Abstract: No abstract text available
Text: 5SGS 12F2500 5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630
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Original
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PDF
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12F2500
1768/138a,
TG/164/05a
Sep-11
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