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    08F45 Search Results

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    08F45 Price and Stock

    Samsung Electro-Mechanics RC1608F4533CS

    RES SMD 453K OHM 1% 1/10W 0603
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    DigiKey RC1608F4533CS Cut Tape 1,364 1
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    • 100 $0.0272
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    RC1608F4533CS Reel 2,000,000
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    RC1608F4533CS Digi-Reel 1
    • 1 $0.1
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    Advanced Thermal Solutions Inc ATS-08F-45-C2-R0

    HEATSINK 25X25X20MM L-TAB T766
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    DigiKey ATS-08F-45-C2-R0 Tray 25 1
    • 1 $3.59
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    Panasonic Electronic Components ERJ-U08F45R3V

    RES 45.3 OHM 1% 1/4W 1206
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    DigiKey ERJ-U08F45R3V Reel 5,000
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    Avnet Americas ERJ-U08F45R3V Reel 22 Weeks 5,000
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    Mouser Electronics ERJ-U08F45R3V
    • 1 $0.25
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    Newark ERJ-U08F45R3V Reel 5,000
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    ERJ-U08F45R3V Cut Tape 5,000
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    Master Electronics ERJ-U08F45R3V
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    Ozdisan Elektronik ERJ-U08F45R3V
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    Panasonic Electronic Components ERJ-S08F45R3V

    RES 45.3 OHM 1% 1/4W 1206
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    DigiKey ERJ-S08F45R3V Reel 5,000
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    Mouser Electronics ERJ-S08F45R3V
    • 1 $0.37
    • 10 $0.29
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    Master Electronics ERJ-S08F45R3V
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    Ozdisan Elektronik ERJ-S08F45R3V
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    Panasonic Electronic Components ERJ-S08F4532V

    RES 45.3K OHM 1% 1/4W 1206
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    DigiKey ERJ-S08F4532V Reel 5,000
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    • 10000 $0.07578
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    Mouser Electronics ERJ-S08F4532V
    • 1 $0.38
    • 10 $0.291
    • 100 $0.123
    • 1000 $0.065
    • 10000 $0.063
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    Master Electronics ERJ-S08F4532V
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    • 10000 $0.0606
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    Ozdisan Elektronik ERJ-S08F4532V
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    08F45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    igct abb

    Abstract: IGCT thyristor ABB gct thyristor IGCT thyristor HFBR-2528 IGCT thyristor current max IGCT
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 08F4502 5SYA1223-04 cosmi1223-04 CH-5600 igct abb IGCT thyristor ABB gct thyristor IGCT thyristor HFBR-2528 IGCT thyristor current max IGCT

    IGCT thyristor ABB

    Abstract: IGCT abb
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 08F4502 5SYA1223-04 08F4502 CH-5600 IGCT thyristor ABB IGCT abb

    hp 2800 diode

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 630 ITSM = 5 VT0 = 1.5 rT = 2.38 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 PRELIMINARY Doc. No. 5SYA1223-03 Feb. 99 • • • • • • • • Features Direct fiber optic control


    Original     		PDF 08F4502 5SYA1223-03 CH-5600 hp 2800 diode

    IGCT thyristor ABB

    Abstract: high power igct abb 5SHX 08F4502 abb cs 400
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 Doc. No. 5SYA 1223-04 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 08F4502 CH-5600 IGCT thyristor ABB high power igct abb 5SHX 08F4502 abb cs 400

    5SDF08F4505

    Abstract: PULSE16
    Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


    Original     		PDF 08F4505 08F4505 08F4005 1768/138a, DM/201/06 Jul-10 5SDF08F4505 PULSE16

    KA DIODE

    Abstract: 5SPR 08F4500 08F45
    Text: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 Doc. No. 5SYA 14PP-01 Oct. 01 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications


    Original     		PDF 08F4500 14PP-01 CH-5600 KA DIODE 5SPR 08F4500 08F45

    5SPR 08F4500

    Abstract: 08F4500 08F45
    Text: VDRM VRRM IPULSE VDcmax = 4.5 kV = 0 V = 12 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPR 08F4500 • • • • • • • • • Features Reverse Conducting Design For single or repetitive pulse applications Very high di/dt capability


    Original     		PDF 08F4500 CH-5600 5SPR 08F4500 08F4500 08F45

    IGCT thyristor ABB

    Abstract: IGCT thyristor current max VT115 A115 B115 HFBR-1528 HFBR-2528 MTA-156 igct abb Pressure transmitter TBD
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 630 5x103 1.8 2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4510 PRELIMINARY Doc. No. 5SYA1223-06 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 08F4510 5SYA1223-06 CH-5600 IGCT thyristor ABB IGCT thyristor current max VT115 A115 B115 HFBR-1528 HFBR-2528 MTA-156 igct abb Pressure transmitter TBD

    IGCT thyristor ABB

    Abstract: IGCT
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 08F4502 5SYA1223-04 08F4502 CH-5600 IGCT thyristor ABB IGCT

    5SDF 08F4505

    Abstract: abb S 08f45
    Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 767 I FSM = 15 000 V TO = 1.807


    Original     		PDF 08F4505 1768/138a, DM/201/06a Aug-11 08F450A Aug-11 5SDF 08F4505 abb S 08f45

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4502 mΩ Ω V Doc. No. 5SYA1223-04 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 08F4502 5SYA1223-04 08F4502 CH-5600

    08F45

    Abstract: 5SPY 08F4500 GATE DRIVER ABB
    Text: VDRM VRRM IPULSE VDcmax = 4.5 kV = 18 V = 30 kA = 2.8 kV High Current High di/dt Switch for Pulsed Power Applications 5SPY 08F4500 • • • • • • • • • Features Asymmetric Design For single or repetitive pulse applications Very high di/dt capability


    Original     		PDF 08F4500 CH-5600 08F45 5SPY 08F4500 GATE DRIVER ABB

    0a214

    Abstract: 048E3 09376h 036D3 030B9H 036B6 08d06 09-D2 0A211 0817AH
    Text: TMS320 DSP Number 84E DESIGNER’S NOTEBOOK Speech data for Spanish LPC Day-Time-Stamping DTS on TMS320Cxx Contributed by Gerardo Murillo Design Problem Where can I get Spanish speech data allowing generation of a vocal output for Date and Time Stamping (DTS) and voice prompts ?


    Original     		PDF TMS320 TMS320Cxx 08937h, 08C18h, 01A5Ah, 093EBh 05CC4h, 04752h, 09246h, 07844h, 0a214 048E3 09376h 036D3 030B9H 036B6 08d06 09-D2 0A211 0817AH

    5SGS 16H4500

    Abstract: CS 23-06 thyristor
    Text: 5SGS 16H4500  5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600


    Original     		PDF 16H4500 1768/138a, TG/171/05a Sep-11 5SGS 16H4500 CS 23-06 thyristor

    CS 23-06 thyristor

    Abstract: No abstract text available
    Text: 5SGS 16H4500 5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600 I TSM = 12 000


    Original     		PDF 16H4500 16H4500 16H4000 1768/138a, TG/171/05 Jul-10 Jul-10 CS 23-06 thyristor

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    ABB GTO

    Abstract: stud type diodes fjs 500
    Text: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.


    OCR Scan     		PDF 05D2501 11F2S01 45x100 ABB GTO stud type diodes fjs 500

    diode sy 170

    Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
    Text: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.


    OCR Scan     		PDF

    R2501

    Abstract: 01R25 71B0200 ABB GTO ci d 4800 r2503 5SDF01R2502 08F4500 b0200 5SDF
    Text: Fast Recovery Diodes ABB Semiconductors AG I O ptim ized fast and soft turn-off. Sm all reverse recovery charge. High di/dt capability at turn-off. Range optim ally suited for GTO applications. > T yp e and ordering num ber O ptim iertes schnelles und weiches


    OCR Scan     		PDF VRRM/100V 01R2501 5SDF01R2502 14urer 3x100 45x100 R2501 01R25 71B0200 ABB GTO ci d 4800 r2503 08F4500 b0200 5SDF

    05D2500

    Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt­ G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.


    OCR Scan     		PDF 15F2502 5D25DQ 01R2501 01R2501 20H2501 05D2500 11F2500 01R25D1 25H25C1 GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    5SDD71B0200

    Abstract: stud type diodes ABB GTO R2501 08F4500 71B0200
    Text: Fast Recovery Diodes ABB Semiconductors AG I Optimized fast and soft turn-off. Small reverse recovery charge. High di/dt capability at turn-off. Range optimally suited for GTO applications. Type and ordering number Optimiertes schnelles und weiches Ausschaltverhalten.


    OCR Scan     		PDF VRRM/100V 01R2501 01R2502 001bfi3fl Fig-10 3x100 45x100 5SDD71B0200 stud type diodes ABB GTO R2501 08F4500 71B0200