W3064C
Abstract: suzhou smd NE B402 IPC-A-600 bt 135
Text: W3064C Ceramic Dual Feed GPS/BT Antenna. 11/10 Ceramic Dual Feed GPS/BT Antenna 1.575GHz and 2.4GHz Ground cleared under antenna. Ground removal area under antenna 10.8 mm x 6.4 mm. Pulse Part Number: W3064C Features - Omni directional radiation - Low profile
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W3064C
575GHz
W3064C
483GHz)
112th
suzhou
smd NE
B402
IPC-A-600
bt 135
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CMPA2735075F
Abstract: No abstract text available
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
78001e
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Untitled
Abstract: No abstract text available
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
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CMPA2735075F
Abstract: IDQ Freq Products RF-35-0100-CH
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
78001SA
IDQ Freq Products
RF-35-0100-CH
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Untitled
Abstract: No abstract text available
Text: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar
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CGH35240F
50-ohm
CGH35240F
CGH3524
CGH35240F-TB
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Untitled
Abstract: No abstract text available
Text: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar
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CGH35240F
50-ohm
CGH35240F
CGH3524
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cgh35240
Abstract: hemt .s2p HEADER RT
Text: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar
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CGH35240F
50-ohm
CGH35240F
CGH3524
CGH35240F-TB
cgh35240
hemt .s2p
HEADER RT
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Untitled
Abstract: No abstract text available
Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar
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CGH31240F
50-ohm
CGH31240F
CGH3124
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Untitled
Abstract: No abstract text available
Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar
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CGH31240F
50-ohm
CGH31240F
CGH3124
CGH31240F-TB
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CGH31240F
Abstract: cgh31240
Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar
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CGH31240F
50-ohm
CGH31240F
CGH3124
CGH31240F-TB
cgh31240
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GLC 555
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET PART NO. DATE ! ! DEPARTMENT! ! REVISION 11-21/GHC-T1U2/2T ! R.D.3 1.2 RECEIVED "MASS PRODUCTION # PRELIMINARY # CUSTOMER DESIGN DEVICE NUMBER : DSE-111-G01 PAGE : 13 CUSTOMER DESIGNER JESSICA CHANG REV CHECKER APPROVER
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11-21/GHC-T1U2/2T
DSE-111-G01
11-21/G
GLC 555
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smd transistor L33
Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
smd transistor L33
UT-090C-25
L33 SMD
PAR ofdm
SMD l33 Transistor
800B
800R
BLF888AS
C1210X475K5RAC-TU
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET PART NO. DATE : : 17-21/GHC-R1S2/3T 2003/9/27 DEPARTMENT : R&D 3 REVISION 1.3 : RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : DSE-171-G01 13 PAGE : CUSTOMER DESIGNER CHECKER Jeff Tsai
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17-21/GHC-R1S2/3T
DSE-171-G01
17-21/G
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GLC 555
Abstract: SMD 5730
Text: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET PART NO. DATE : : 17-215/G6C-FL2N1/3T 2003/9/16 DEPARTMENT : R&D 3 REVISION 1.3 : RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : DSE-175-G01 13 PAGE : CUSTOMER DESIGNER CHECKER Jeff Tsai
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17-215/G6C-FL2N1/3T
DSE-175-G01
GLC 555
SMD 5730
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smd transistor L33
Abstract: transistor smd l33 SMD l33 Transistor
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
smd transistor L33
transistor smd l33
SMD l33 Transistor
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BLF888A
Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
SMD l33 Transistor
smd transistor L33
dvb-t2
ST EZ 711 253
BLF888AS
smd transistor l32
UT-090C-25
L33 SMD
transistor smd l33
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Untitled
Abstract: No abstract text available
Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888B;
BLF888BS
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smd transistor l31
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
smd transistor l31
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Untitled
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
narrow15
BLF888A
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BLF888B
Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888B;
BLF888BS
BLF888B
smd transistor L33
Technical Specifications of DVB-T2 Transmitter
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smd diode c539
Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
Text: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF
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S630/S670
BA60-00030A
BA68-40005L
BA70-00030A
BA72-00063A
BA73-00001A
BA92-00073A
0404agrams
smd diode c539
samsung sens r20
smd diode marking C535
toshiba dvd hdd schematic diagram
RA57
1400l
toshiba hdd schematic board
st smd diode marking code C701
SMD RA57
logitech 3 button
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UT-090C-25
Abstract: smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
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BLU6H0410L-600P;
BLU6H0410LS-600P
BLU6H0410L-600P
6H0410LS-600P
UT-090C-25
smd transistor l32
NXP amplifier
EZ 711 253
J1072
ST EZ 711 253
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SMD l33 Transistor
Abstract: No abstract text available
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
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BLU6H0410L-600P;
BLU6H0410LS-600P
BLU6H0410L-600P
6H0410LS-600P
SMD l33 Transistor
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907 TRANSISTOR smd
Abstract: No abstract text available
Text: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 1 — 13 October 2011 Objective data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF884P;
BLF884PS
BLF884P
907 TRANSISTOR smd
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