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    CGH35240F Search Results

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    CGH35240F Price and Stock

    MACOM CGH35240F

    RF MOSFET HEMT 28V 440201
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    DigiKey CGH35240F Tray 18 1
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    Mouser Electronics CGH35240F 30
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    Richardson RFPD CGH35240F 10
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    CGH35240F Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH35240F Wolfspeed 240W GAN HEMT 28V 3.1-3.5GHZ FET Original PDF
    CGH35240F Wolfspeed 240W GAN HEMT 28V 3.1-3.5GHZ FET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar


    Original     		PDF CGH35240F 50-ohm CGH35240F CGH3524

    CGH35240F

    Abstract: power transistor gan s-band CGH35240F-TB cgh35240 A114D CGH3524 CGH35240-TB JESD22
    Text: ADVANCED INFORMATION CGH35240F 240 W, 2900-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth


    Original     		PDF CGH35240F 50-ohm CGH35240F CGH3524 power transistor gan s-band CGH35240F-TB cgh35240 A114D CGH3524 CGH35240-TB JESD22

    cgh35240

    Abstract: hemt .s2p HEADER RT
    Text: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar


    Original     		PDF CGH35240F 50-ohm CGH35240F CGH3524 CGH35240F-TB cgh35240 hemt .s2p HEADER RT

    Untitled

    Abstract: No abstract text available
    Text: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar


    Original     		PDF CGH35240F 50-ohm CGH35240F CGH3524 CGH35240F-TB