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CMPA2735075F Price and Stock

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MACOM CMPA2735075F1 IC AMP RADAR 2.7-3.5GHZ 780019
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA2735075F1	Tray	55		1	1 $831.88 10 $705.744 100 $705.744 1000 $705.744 10000 $705.744	Buy Now
Mouser Electronics	CMPA2735075F1		1			1 $524.62 10 $490.22 100 $490.22 1000 $490.22 10000 $490.22	Buy Now
Richardson RFPD	CMPA2735075F1				10	1 - 10 $654.65 100 $654.65 1000 $654.65 10000 $654.65	Buy Now
MACOM CMPA2735075F1-AMP AMPLIFIER, 2.7-3.5GHZ, GAN MMIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA2735075F1-AMP	Bulk			2	1 - 10 $1431.45 100 $1431.45 1000 $1431.45 10000 $1431.45	Buy Now
Mouser Electronics	CMPA2735075F1-AMP					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	CMPA2735075F1-AMP		1		1	1 $976.12 10 $976.12 100 $976.12 1000 $976.12 10000 $976.12	Buy Now
MACOM CMPA2735075F RF Amplifier GaN MMIC Power Amp
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA2735075F					1 - 10 $679.29 100 $679.29 1000 $679.29 10000 $679.29	Get Quote

CMPA2735075F Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CMPA2735075F1		Wolfspeed	75W GAN MMIC 50V 2.7-3.5GHZ		Original	PDF
CMPA2735075F1-AMP		Wolfspeed	AMPLIFIER, 2.7-3.5GHZ, GAN MMIC		Original	PDF

CMPA2735075F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2735075F CMPA2735075F CMPA27 35075F	PDF
CMPA2735075F Abstract: CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1 Text: ADVANCED INFORMATION CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2735075F CMPA2735075F CMPA27 35075F CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1	PDF
CMPA2735075F Abstract: IDQ Freq Products RF-35-0100-CH Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2735075F CMPA2735075F CMPA27 35075F 78001SA IDQ Freq Products RF-35-0100-CH	PDF
CMPA2735075F Abstract: No abstract text available Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2735075F CMPA2735075F CMPA27 35075F 78001e	PDF