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    CMPA2735075F Search Results

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    CMPA2735075F Price and Stock

    MACOM CMPA2735075F1

    IC AMP RADAR 2.7-3.5GHZ 780019
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    DigiKey CMPA2735075F1 Tray 30 1
    • 1 $524.62
    • 10 $490.223
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    Mouser Electronics CMPA2735075F1 1
    • 1 $524.62
    • 10 $490.22
    • 100 $490.22
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    Richardson RFPD CMPA2735075F1 10
    • 1 -
    • 10 $639.13
    • 100 $639.13
    • 1000 $639.13
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    MACOM CMPA2735075F1-AMP

    AMPLIFIER, 2.7-3.5GHZ, GAN MMIC
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    DigiKey CMPA2735075F1-AMP Bulk 2
    • 1 -
    • 10 $1431.45
    • 100 $1431.45
    • 1000 $1431.45
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    Mouser Electronics CMPA2735075F1-AMP
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    Richardson RFPD CMPA2735075F1-AMP 1 1
    • 1 $976.12
    • 10 $976.12
    • 100 $976.12
    • 1000 $976.12
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    MACOM CMPA2735075F

    RF Amplifier GaN MMIC Power Amp
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    Mouser Electronics CMPA2735075F
    • 1 -
    • 10 $679.29
    • 100 $679.29
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    CMPA2735075F Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CMPA2735075F1 Wolfspeed 75W GAN MMIC 50V 2.7-3.5GHZ Original PDF
    CMPA2735075F1-AMP Wolfspeed AMPLIFIER, 2.7-3.5GHZ, GAN MMIC Original PDF

    CMPA2735075F Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2735075F CMPA2735075F CMPA27 35075F

    CMPA2735075F

    Abstract: CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1
    Text: ADVANCED INFORMATION CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2735075F CMPA2735075F CMPA27 35075F CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1

    CMPA2735075F

    Abstract: IDQ Freq Products RF-35-0100-CH
    Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2735075F CMPA2735075F CMPA27 35075F 78001SA IDQ Freq Products RF-35-0100-CH

    CMPA2735075F

    Abstract: No abstract text available
    Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2735075F CMPA2735075F CMPA27 35075F 78001e