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    35075F Search Results

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    35075F Price and Stock

    MACOM CMPA2735075F1

    IC AMP RADAR 2.7-3.5GHZ 780019
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    DigiKey CMPA2735075F1 Tray 30 1
    • 1 $524.62
    • 10 $490.223
    • 100 $490.223
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    Mouser Electronics CMPA2735075F1 1
    • 1 $524.62
    • 10 $490.22
    • 100 $490.22
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    Richardson RFPD CMPA2735075F1 10
    • 1 -
    • 10 $639.13
    • 100 $639.13
    • 1000 $639.13
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    MACOM CMPA2735075F1-AMP

    AMPLIFIER, 2.7-3.5GHZ, GAN MMIC
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    DigiKey CMPA2735075F1-AMP Bulk 2
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    • 10 $1431.45
    • 100 $1431.45
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    Mouser Electronics CMPA2735075F1-AMP
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    Richardson RFPD CMPA2735075F1-AMP 1 1
    • 1 $976.12
    • 10 $976.12
    • 100 $976.12
    • 1000 $976.12
    • 10000 $976.12
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    MACOM CMPA2735075F

    RF Amplifier GaN MMIC Power Amp
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    Mouser Electronics CMPA2735075F
    • 1 -
    • 10 $679.29
    • 100 $679.29
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    Samtec Inc MW-40-03-G-D-235-075-FR

    Board to Board & Mezzanine Connectors
    Free Sample
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    Sager MW-40-03-G-D-235-075-FR
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    Samtec Inc MW-07-03-G-D-235-075-FR

    Board to Board & Mezzanine Connectors
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Sager MW-07-03-G-D-235-075-FR
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    35075F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 35075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s 35075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2735075F CMPA2735075F CMPA27 35075F

    CMPA2735075F

    Abstract: CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1
    Text: ADVANCED INFORMATION 35075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s 35075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2735075F CMPA2735075F CMPA27 35075F CMPA2735075F-TB RF-35-0100-CH cree military mobility CGH2735075 tRANSISTOR 2.7 3.1 3.5 GHZ cw AMP1052901-1

    CMPA2735075F

    Abstract: IDQ Freq Products RF-35-0100-CH
    Text: 35075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s 35075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2735075F CMPA2735075F CMPA27 35075F 78001SA IDQ Freq Products RF-35-0100-CH

    CMPA2735075F

    Abstract: No abstract text available
    Text: 35075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s 35075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2735075F CMPA2735075F CMPA27 35075F 78001e

    2N5968

    Abstract: 2N5967 Solidev Semiconductors Scans-0012430 Solidev
    Text: Sem iconductors Solidev Silicon Power Transistors M A X IM U M O P E R A T IN G A R E A S Silicon N P N /P N P Power Transistors—40 Amp A B S O L U T E M A X IM U M R A T IN G S 2N5967 2N5968 V 100 100 B V CEo (V) 100 100 BV c b o B V ebo (V) 8 10 lc M a x (A )


    OCR Scan     		PDF N5967 2N5968 2N5967 35076D 2N5968 Solidev Semiconductors Scans-0012430 Solidev