HVS10000
Abstract: HVS20000 HVS15000 HVS25000 HVS30000 HVS5000 HVS12500 HVS2500 HVS7500
Text: B?Gbfl4b OOPGlbl SERIES HVS bib |u T \^ I -T % iW - 2,500 to 30,000 Volts 3 Amps. Standard Recovery DIMENSIONS See table L' x 0.75‘ W X 0.40" H Leads: 2.0‘ long, 0,050" dia. Axial Lead • Flat Pack • Glass Passivated High Voltage Rectifier Assemblies
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HVS2500
HVS5000
HVS7500
HVS10000
HVS15000
HVS20000
HVS25000
HVS30000
HVS12500
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1D11013
Abstract: 1dz 2 0084004 74ALVC16373 f 1le bb53T2 74ALVC15373DL
Text: NAPC/PHILIPS SEniCOND b3E ]> • bbS3ciE4 DGÖHDßG Gbfl * S I C 3 Philips Semiconductors Objective Specification Dual octal D-type transparent latch; 3-state FEATURES • • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC
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bbS31E4
DD640B0
74ALVC16373
74ALVC16373
1D11013
1dz 2
0084004
f 1le
bb53T2
74ALVC15373DL
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Untitled
Abstract: No abstract text available
Text: 2?Gbfl4b Ü Ü 0 D 1 7 4 TÔ3 5 to 20 KV 2 Amps. 75 ns. Recovery SERIES HVFWBUF 0.032 x 0 250 FIGURE 1 Tab Terminals Typ FIGURE 2 0 032 x 0 250 Tab Termtrvais Typ OKahM fcr# ' INCHCS “ ofi 2 -" * r * HVCA All dimensions in inches. »-=• "!3 4 / 5 t* g
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5117400
1AD05-20-MAR94
4b750fifi
HY5117400JC
HY5117400UC
HY5117400TC
HY5117400LTC
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2SB1171A
Abstract: 001582 IC vertical panasonic 2SB1171 2SD1718 hlkl
Text: Power Transistors 2SB1171, 2SB1171A 2SB1171, 2SB1171A Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Am plifier T V Vertical Deflection Output C om plem entary Pair with 2 S D 1 718 U n it - mm 3.7m ax 7.3m ax. • Features 3.2m ax. 0 .9 ± 0 .1
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2SB1171,
2SB1171A
2SD1718
2SB1171
2SB1171A
001582
IC vertical panasonic
2SD1718
hlkl
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Untitled
Abstract: No abstract text available
Text: 3Ü GEC P L E S S E Y au g u st 19 9 5 S E M I C O N D U C T O R S DS4171-3.3 DS2102SY RECTIFIER DIODE KEY PARAMETERS VRRM 2000V >p a v , 5460A APPLICATIONS • Rectification. ■ Freewheel Diode. lFSM 100000A ■ DC Motor Control. ■ Power Supplies. ■ Welding.
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DS4171-3
DS2102SY
00000A
DS2102SY20
DS2102SY19
DS2102SY18
DS2102SY17
DS2102SY16
DS2102SY15
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N I M g [ 3 I ! L i© r a R ie S L 9 8 2 2 E OCTAL SERIAL SOLENOID DRIVER ADVANCE DATA . EIGHT LOW R dsoo DMOS OUTPUTS (0.5Q AT lo = 1A @ 25°C Vcc = 5V± 5% • 8 BIT SERIAL INPUT DATA (SPI) . 8 BIT SERIAL DIAGNOSTIC OUTPUT FOR
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MULTIWATT15,
PowerS020
S020L
TheL9822E
GDb637S
L9822E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KS0789 CMOS DIGITAL INTEGRATED CIRCUIT Introduction 100 channel Common driver for LCD DOT MATRIX, KS0789 is a LCD driver LSI which Is fabricated by low power CMOS high voltage process technology. This device consists o f tw o 50 bit Bidirection shift registers
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KS0789
KS0789
50-bit
60-QFP-1414A
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns
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KM416C256A/AL/ALL
256Kx
110ns
KM416C256A/AÃ
130ns
KM416C256A/AL/ALL-8
150ns
KM416C256A/AUALL-6
40-LEAD
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10 pin frc
Abstract: A108 LB1981V 100M23
Text: Ordering number : ENN5917 Monolithic Digital IC LB 1981V jS A itfO j Three-Phase Brushless Motor Driver Overview Package Dimensions The LB 198IV is a three-phase brushless motor driver especially suited for use mainly with drum motors of portable VCRs. unit: mm
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ENN5917
LB1981V
A10872
A10873
A10874
00E4554
GG545SS
10 pin frc
A108
LB1981V
100M23
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transistor 3l2
Abstract: 3L2 TO252 L76M05 SC07770 L78M00AB L78M00AC L78M05ABDT L78M05ABV L78M05ACDT L78M06ACDT
Text: SCS-THOMSON MœSiLIOÏÏIFSMDiBS L78M00AB/AC SERIES PRECISION 500mA REGULATORS i OUTPUT CURRENT UP TO 0.5A . OUTPUT VOLTAGES OF 5; 6; 8; 9:10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTORS SOA PROTECTION
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L78M00AB/AC
500mA
L78M00AB
TCJ-220
L78M00AB/AC
O-252
transistor 3l2
3L2 TO252
L76M05
SC07770
L78M00AC
L78M05ABDT
L78M05ABV
L78M05ACDT
L78M06ACDT
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M51131L
Abstract: zig bee M5113 AUDIO volume CONTROL IC
Text: M ITSUBISHI LINEAR ICs * b24*Jü2ti Ü G l í C n s MITSUBISHI ELEK T70 • H I T 2 M51131L L IN E A R CHANNEL ELECTRONIC VOLUME BALANCE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 51131L is a sem icon ductor in te gra te d circu it d e sig ne d for du al-chan ne l e le ctro n ic volum e balance control.
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M51131L
M51131L
14-pin
14P5A
zig bee
M5113
AUDIO volume CONTROL IC
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MU-206S
Abstract: HD6461OFP HM62256 HD64610 Hitachi Hd64610
Text: L.1E T> m 44Tb204 0G3flb30 b24 •HIT3 H D 6 4 6 1 0 - HITACHI/ nCU/MPU C alendar C lo ck 1C Description v ss d 1 24 Z I H-START/STOP d 2 23 Z I ose ose The H D 64610 is a calendar clock IC providing calendar clock functions and an 8-bit static-RAM
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44Tb204
0G3flb30
HD64610-
HD64610
HM62256
30-second
MU-206S
HD6461OFP
HM62256
Hitachi Hd64610
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brooktree 360
Abstract: Bt858
Text: C ir c u it D e s c r ip t io n Pin Descriptions Pin Name Description The first three pins described are defined and named depending upon the timing mode chosen for use. In timing modes 0,1 and 3, the pins F/BLANK*, H/HSYNC* and V/VSYNC* refer to BLANK*, HSYNC* and VSYNC*. In timing mode 2 they refer to F field , H (horizontal blank),
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Bt858
11Q73
DD33D01
brooktree 360
Bt858
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HY51V18164B
Abstract: No abstract text available
Text: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques
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16-bit
HY51V18164B
16-bit.
470C11
10X168}
4b750Ã
1AD60-10-MAY95
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gi 9644 diode
Abstract: INTELDX4 write-through
Text: in te i, MILITARY Intel 486 PROCESSOR FAMILY • Write-Back Enhanced ln t e l D X 4 ™ Processor — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit
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100-MHz
32-Bit
16K-Byte
Intel486â
168-oller
gi 9644 diode
INTELDX4 write-through
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B1171
Abstract: 2SB1171 2SB1171A 2SD1718 IC vertical panasonic ELSA gbfl
Text: Power Transistors 2SB1171, 2SB1171A 2SB1171, 2SB1171A Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Am plifier T V Vertical Deflection Output C om plem entary Pair with 2 S D 1 7 1 8 U n it • 3.7max, 7.3m ax. ■ Features 0.9 ± 0.1 0 .5 m ax .-
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B1171,
2SB1171A
2SB1171,
2SD1718
2SB1171
2S31171A
B1171
2SB1171A
2SD1718
IC vertical panasonic
ELSA
gbfl
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International Rectifier 16f series
Abstract: No abstract text available
Text: Bulletin 120204 International S Rectifier 16F R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 16 A High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM
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0100s
4A55452
International Rectifier 16f series
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LN427
Abstract: laf 0001 power 9410b ic laf 0001 10BASE2 10BASE5 CRD8900-1 CS8900 CS8900-CQ testing motherboards using multi meter
Text: CS8900 A Cirrus Logic Company Highly-Integrated ISA Ethernet Controller Features Description • The CS8900 is a low-cost Ethernet LAN Controller op timized for Industry Standard Architecture ISA Per sonal Computers. Its highly-integrated design elimi
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CS8900
10BASE-T
10BASE2,
10BASE5
10BASE-F
Pre-ProcessiS8900.
0144h)
0146h)
DS150PP2
LN427
laf 0001 power
9410b
ic laf 0001
10BASE2
CRD8900-1
CS8900-CQ
testing motherboards using multi meter
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KMM366S404AT
Abstract: circuit diagram for auto on off
Text: KMM366S404AT NEW JEDEC SDRAM MODULE KMM366S404AT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S404AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S404AT
KMM366S404AT
4Mx64
4Mx16,
400mil
168-pin
circuit diagram for auto on off
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HN62344BP
Abstract: HN62344
Text: blE D • 44^203 HN62344B Series 0D22323 412 ■ H I T 2 — - HITACHI/ LOG IC/ARRAYS/MEM 524288-word x 8-bit CMOS Mask Programmable Read Only Memory T he H N 62344B is a 4 -M b it CM OS m askprogrammable ROM organized as 524288 words by 8 bits. Realizing low power consumption, this
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0D22323
HN62344B
524288-word
-13-IS-
L06IC/ARRAYS/MEM
HN62344BP
HN62344
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Untitled
Abstract: No abstract text available
Text: MP7524A CMOS Buffered Multiplying 8-Bit Digital-to-Analog Converter w FEATURES APPLICATIONS • • • • • • • • • • • • • *o u t Pin Voltages are User Definable Improved Isolation of Analog from Digital Ground Full Four-Quadrant Multiplication
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MP7524A
MP75L24
MP7524A)
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cd 4004
Abstract: No abstract text available
Text: P R E C I S I O N _ T H I N _ F I L M _ T E C H N O L O G Y SURFACE MOUNT NETWORKS Molded, SOT-23 Resistor Network MPM Series Divider F eatures Stocked Standard Footprint T y p ic a l P e r f o r m a n c e • TCR A c tu a l Siz
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OT-23
MPM1002BW
MPM1001/1002AT
38A03
181H7
42728J400
cd 4004
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Untitled
Abstract: No abstract text available
Text: r Z J S G S -T H O M S O N M28F512 512K 64K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10ns
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M28F512
PDIP32
PLCC32
M28F512
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