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    GAN TRANSISTOR 180 Search Results

    GAN TRANSISTOR 180 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70023SEHMX Renesas Electronics Corporation 100V, 60A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL73024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL70024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL70023SEHML Renesas Electronics Corporation 100V, 60A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL73024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation

    GAN TRANSISTOR 180 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EAR99

    Abstract: HEMT 36 ghz transistor
    Text: MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-003135-180L00 300us EAR99 MAGX-003135-180L00 HEMT 36 ghz transistor

    EAR99

    Abstract: MAGX-002731-180L00
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V1 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us, 500us, MAGX-002731-180L00

    Untitled

    Abstract: No abstract text available
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018

    CGH40180PP

    Abstract: CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p

    Untitled

    Abstract: No abstract text available
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018

    CGH40180PP

    Abstract: ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623

    Untitled

    Abstract: No abstract text available
    Text: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V2 26 Oct 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation


    Original     		PDF MAGX-002731-180L00 300us EAR99 300us,

    CGH40180PP

    Abstract: cgh40180 CGH4018 CGH40180PP-TB JESD22 smd transistor s2p
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 cgh40180 CGH4018 CGH40180PP-TB JESD22 smd transistor s2p

    CGH40180PP

    Abstract: ATC600F L-14C6N8ST C32-C42 CGH4018 CGH40180
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 ATC600F L-14C6N8ST C32-C42 CGH40180

    Untitled

    Abstract: No abstract text available
    Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications


    Original     		PDF CGHV27030S CGHV27030S CGHV27

    f 9582 dc

    Abstract: ATC600F cgh40180 cgh40180pp L-14C6N8ST CGH40180PP-TB 9582 dc ATC600S Cree Microwave CGH4018
    Text: PRELIMINARY CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 f 9582 dc ATC600F cgh40180 L-14C6N8ST CGH40180PP-TB 9582 dc ATC600S Cree Microwave CGH4018

    transistor smd 1p8

    Abstract: No abstract text available
    Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications


    Original     		PDF CGHV27030S CGHV27030S CGHV27 transistor smd 1p8

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH55015 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH55015 CGH55015 CGH5501 CGH55015F

    Untitled

    Abstract: No abstract text available
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    CGHV1J006D

    Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package


    Original     		PDF MAGX-001220-100L00

    Untitled

    Abstract: No abstract text available
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012

    CGHV96100F2

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    Untitled

    Abstract: No abstract text available
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012

    Untitled

    Abstract: No abstract text available
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1

    CGH40120F

    Abstract: CGH4012 CGH40120F-TB ro4003 3186 cap
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012 CGH40120F-TB ro4003 3186 cap