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    CGHV1J006D Price and Stock

    MACOM CGHV1J006D-GP4

    RF MOSFET HEMT 40V DIE
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    DigiKey CGHV1J006D-GP4 Tray 130 10
    • 1 -
    • 10 $75.593
    • 100 $68.1334
    • 1000 $68.1334
    • 10000 $68.1334
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    Mouser Electronics CGHV1J006D-GP4 30
    • 1 -
    • 10 $73.65
    • 100 $66.19
    • 1000 $66.19
    • 10000 $66.19
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    Richardson RFPD CGHV1J006D-GP4 1
    • 1 $92.9
    • 10 $92.9
    • 100 $92.9
    • 1000 $92.9
    • 10000 $92.9
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    MACOM CGHV1J006D-GP5

    GaN FETs DIE, 6W, 18.0GHz, GaN HEMT, 1.2mm, GP5
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    Mouser Electronics CGHV1J006D-GP5
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    CGHV1J006D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGHV1J006D-GP4 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V DIE Original PDF

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    CGHV1J006D

    Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor

    Untitled

    Abstract: No abstract text available
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz