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    CGH401 Price and Stock

    MACOM CGH40180PP

    RF MOSFET HEMT 28V 440199
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40180PP Tray 42 1
    • 1 $564.43
    • 10 $547.453
    • 100 $547.453
    • 1000 $547.453
    • 10000 $547.453
    		Buy Now
    Mouser Electronics CGH40180PP 69
    • 1 $564.33
    • 10 $545.06
    • 100 $545.06
    • 1000 $545.06
    • 10000 $545.06
    		Buy Now
    Verical CGH40180PP 75 1
    • 1 $908.95
    • 10 $908.95
    • 100 $908.95
    • 1000 $908.95
    • 10000 $908.95
    		Buy Now
    Richardson RFPD CGH40180PP 75 1
    • 1 $908.95
    • 10 $908.95
    • 100 $908.95
    • 1000 $908.95
    • 10000 $908.95
    		Buy Now
    Chip1Stop CGH40180PP 75
    • 1 $1110
    • 10 $1100
    • 100 $1100
    • 1000 $1100
    • 10000 $1100
    		Buy Now

    MACOM CGH40120F

    RF MOSFET HEMT 28V 440193
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40120F Tray 32 1
    • 1 $466.52
    • 10 $437.088
    • 100 $437.088
    • 1000 $437.088
    • 10000 $437.088
    		Buy Now
    Mouser Electronics CGH40120F 78
    • 1 $442.11
    • 10 $419.08
    • 100 $419.08
    • 1000 $419.08
    • 10000 $419.08
    		Buy Now
    Richardson RFPD CGH40120F 1
    • 1 $608.99
    • 10 $608.99
    • 100 $608.99
    • 1000 $608.99
    • 10000 $608.99
    		Buy Now

    MACOM CGH40180PP-AMP

    CGH40180PP DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40180PP-AMP Box 1 1
    • 1 $1125.91
    • 10 $1125.91
    • 100 $1125.91
    • 1000 $1125.91
    • 10000 $1125.91
    		Buy Now
    Richardson RFPD CGH40180PP-AMP 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    MACOM CGH40120P

    RF MOSFET HEMT 28V 440206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40120P Tray 100
    • 1 -
    • 10 -
    • 100 $351.9
    • 1000 $351.9
    • 10000 $351.9
    		Buy Now
    Mouser Electronics CGH40120P
    • 1 -
    • 10 -
    • 100 $337.84
    • 1000 $337.84
    • 10000 $337.84
    		Get Quote
    Richardson RFPD CGH40120P 25
    • 1 -
    • 10 -
    • 100 $419.6
    • 1000 $419.6
    • 10000 $419.6
    		Buy Now

    MACOM CGH40120F-AMP

    CGH40120F DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40120F-AMP Box 2
    • 1 -
    • 10 $985.91
    • 100 $985.91
    • 1000 $985.91
    • 10000 $985.91
    		Buy Now
    Richardson RFPD CGH40120F-AMP 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    Find more CGH401 price and stock on Findchips.com

    CGH401 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH40120F Cree RF FETs, Discrete Semiconductor Products, TRANS 120W RF GAN HEMT 440193PKG Original PDF
    CGH40120F-AMP Wolfspeed CGH40120F DEV BOARD WITH HEMT Original PDF
    CGH40120F-AMP Wolfspeed CGH40120F DEV BOARD WITH HEMT Original PDF
    CGH40120F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40120 Original PDF
    CGH40120P Wolfspeed 120W, GAN HEMT, 28V, DC-3.0GHZ, Original PDF
    CGH40120P Wolfspeed 120W, GAN HEMT, 28V, DC-3.0GHZ, Original PDF
    CGH40180PP Cree RF FETs, Discrete Semiconductor Products, TRANS 180W RF GAN HEMT 440199PKG Original PDF
    CGH40180PP-AMP Wolfspeed CGH40180PP DEV BOARD WITH HEMT Original PDF
    CGH40180PP-AMP Wolfspeed CGH40180PP DEV BOARD WITH HEMT Original PDF
    CGH40180PP-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40180 Original PDF

    CGH401 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cgh40120F

    Abstract: CAP 0805 ATC 600F 154-04 CGH4012 CGH40120F-TB 095.91 cgh401 CGH40120
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012 CAP 0805 ATC 600F 154-04 CGH4012 CGH40120F-TB 095.91 cgh401 CGH40120

    CGH40180PP

    Abstract: CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p

    Untitled

    Abstract: No abstract text available
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018

    CGH40180PP

    Abstract: ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623

    Untitled

    Abstract: No abstract text available
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012

    Untitled

    Abstract: No abstract text available
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018

    Untitled

    Abstract: No abstract text available
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012

    CGH40120F

    Abstract: CGH4012 CGH40120F-TB ro4003 3186 cap
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012 CGH40120F-TB ro4003 3186 cap

    CGH40120F

    Abstract: CAP 0805 ATC 600F CGH4012 CGH40120F-TB JESD22 ATC 600F
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012 CAP 0805 ATC 600F CGH4012 CGH40120F-TB JESD22 ATC 600F

    cgh40120

    Abstract: CGH4012 CAP 0805 ATC 600F 0805 SMD resistors derating L-14C6N8ST cgh401 CGH40120P transistor SMD 3906
    Text: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40120P CGH40120P CGH40120P, CGH4012 cgh40120 CAP 0805 ATC 600F 0805 SMD resistors derating L-14C6N8ST cgh401 transistor SMD 3906

    CGH40120F

    Abstract: No abstract text available
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012

    Untitled

    Abstract: No abstract text available
    Text: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40120P CGH40120P CGH40120P, CGH4012

    Untitled

    Abstract: No abstract text available
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012

    Untitled

    Abstract: No abstract text available
    Text: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40120P CGH40120P CGH40120P, CGH4012

    CGH40120F

    Abstract: ro4003 microwave product CAP 0805 ATC 600F CGH40120F-TB ATC 600F Cree Microwave CGH4012 16QAM cgh401
    Text: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40120F CGH40120F CGH40120F, CGH4012 ro4003 microwave product CAP 0805 ATC 600F CGH40120F-TB ATC 600F Cree Microwave CGH4012 16QAM cgh401

    f 9582 dc

    Abstract: ATC600F cgh40180 cgh40180pp L-14C6N8ST CGH40180PP-TB 9582 dc ATC600S Cree Microwave CGH4018
    Text: PRELIMINARY CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 f 9582 dc ATC600F cgh40180 L-14C6N8ST CGH40180PP-TB 9582 dc ATC600S Cree Microwave CGH4018

    CGH40180PP

    Abstract: cgh40180 CGH4018 CGH40180PP-TB JESD22 smd transistor s2p
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 cgh40180 CGH4018 CGH40180PP-TB JESD22 smd transistor s2p

    CGH40180PP

    Abstract: ATC600F L-14C6N8ST C32-C42 CGH4018 CGH40180
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGH40180PP CGH40180PP CGH40180PP, CGH4018 ATC600F L-14C6N8ST C32-C42 CGH40180

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    ofdm predistortion

    Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
    Text: May 2009 Short range wireless UWB GPS and satellite  GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based


    Original     		PDF

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF