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    CGHV96100F2 Search Results

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    CGHV96100F2 Price and Stock

    MACOM CGHV96100F2

    RF MOSFET HEMT 40V 440210
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96100F2 Tray 48 1
    • 1 $1000.39
    • 10 $999.725
    • 100 $999.725
    • 1000 $999.725
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    Mouser Electronics CGHV96100F2
    • 1 $997.72
    • 10 $997.72
    • 100 $997.72
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    Verical CGHV96100F2 6 1
    • 1 $1496.2
    • 10 $1496.2
    • 100 $1496.2
    • 1000 $1496.2
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    Richardson RFPD CGHV96100F2 6 1
    • 1 $1496.16
    • 10 $1496.16
    • 100 $1496.16
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    Chip1Stop CGHV96100F2 6
    • 1 $1640
    • 10 $1620
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    MACOM CGHV96100F2-AMP

    CGHV96100F2 DEV BOARD WITH HEMT
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    DigiKey CGHV96100F2-AMP Box 4 1
    • 1 $1378.61
    • 10 $1378.61
    • 100 $1378.61
    • 1000 $1378.61
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    Mouser Electronics CGHV96100F2-AMP
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    Richardson RFPD CGHV96100F2-AMP 1
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    CGHV96100F2 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGHV96100F2 Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W Original PDF
    CGHV96100F2-AMP Wolfspeed CGHV96100F2 DEV BOARD WITH HEMT Original PDF
    CGHV96100F2-AMP Wolfspeed CGHV96100F2 DEV BOARD WITH HEMT Original PDF
    CGHV96100F2-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2 Original PDF

    CGHV96100F2 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    40VPulse

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    CGHV96100F2

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2