NEC Ga FET marking L
Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.
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NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
NEC Ga FET marking L
marking K gaas fet
NEC Ga FET marking A
nec gaas fet marking
NEC Ga FET marking Rf
nec 9000
NEC Ga FET marking V
NEC Ga FET "marking V"
NEC Ga FET
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NEC Ga FET marking Rf
Abstract: nec gaas fet marking
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.
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NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
IR30-00
NEC Ga FET marking Rf
nec gaas fet marking
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smd C1D
Abstract: marking code C1d SMD l0131 datasheet ic 4060 Q62702-L0132 BGV503 BGV903 marking c2d GPS09230 negative voltage regulator ic
Text: GaAs Support IC BGV503 / BGV903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV503, BGV903 – for cellular phones • BGV503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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BGV503
BGV903
BGV503,
BGV503:
BGV903:
BGV503)
BGV903)
P-TSSOP-10-2
smd C1D
marking code C1d SMD
l0131
datasheet ic 4060
Q62702-L0132
BGV903
marking c2d
GPS09230
negative voltage regulator ic
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HA 12058
Abstract: 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf
Text: DATA SHEET GaAs MES FET NE76038 G ENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for im proved RF and DC performance reliability and uniform ity. Its excellent low noise and high associated gain make
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NE76038
NE76038
HA 12058
9971GI
nec 2561-2
NEC Ga FET marking A
NEC Ga FET marking Rf
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marking code C1d SMD
Abstract: smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
P-TSSOP-10-1
GPS09184
marking code C1d SMD
smd C1D
lowpassfilter
marking bgv
MARKING CODE SMD IC 503
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marking code C1d SMD
Abstract: smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
P-TSSOP-10-1
GPS09184
marking code C1d SMD
smd C1D
Q62702-L0131
Q62702-L0132
marking bgv
P-TSSOP-10-1
5v regulator
c2pr
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Untitled
Abstract: No abstract text available
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
P-TSSOP-10-2
GPS09230
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gaas fet marking AR
Abstract: No abstract text available
Text: Infineon tei hnoiosi*» GaAs Support 1C BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips - BGV 503, BGV 903 - for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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503/BGV
111111i
gaas fet marking AR
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Sony 104A
Abstract: No abstract text available
Text: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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SGM2014M]
SGM2014M
900MHz
at900MHz
OT-143
M-254
Sony 104A
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F31Z
Abstract: SPF-3143Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143
Text: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-343 Product Description Features SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT 0.58dB NFMIN at 2GHz
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SPF-3143Z
OT-343
31dBm
SPF-3143Z
DS091103
F31Z
SPF3143Z
SPF-3143
pHEMT FET marking A
spf3143
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223
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MARKING 717
Abstract: sot-223 MARKING CODE 718 Power amplifier for mobile phones For sot223
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Untitled
Abstract: No abstract text available
Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY10
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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KGF2236
Abstract: k2236 J0124 16PSSOP TA 8644 12943
Text: This version: Jul. 1998 Previous version: — E2Q0056-18-73 ¡ electronic components KGF2236 ¡ electronic components KGF2236 Dual Monolithic GaAs Power FET GENERAL DESCRIPTION The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that
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E2Q0056-18-73
KGF2236
KGF2236,
KGF2236
100000pF
k2236
J0124
16PSSOP
TA 8644
12943
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PO 9038
Abstract: gaas fet marking a MAX 8985 pin diagram of 7414 019 triquint d 5287 power FET transistor 2 gigahertz Gp 28 db transistor 5478 01380
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223:
PO 9038
gaas fet marking a
MAX 8985
pin diagram of 7414
019 triquint
d 5287
power FET transistor 2 gigahertz Gp 28 db
transistor 5478
01380
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Untitled
Abstract: No abstract text available
Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY10
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cly10
Abstract: CLY 10
Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY10
CLY 10
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY5
Abstract: 93 69 MARKING CODE
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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04435
Abstract: CLY 70
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY5
Abstract: MAX 8985 09069 ipc 9702 07293 13.3921
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223
CLY5
MAX 8985
09069
ipc 9702
07293
13.3921
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