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    NE76038 Search Results

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    NE76038 Price and Stock

    NEC Electronics Group NE76038-T1

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    Bristol Electronics NE76038-T1 620
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    NEC Electronics Group NE76038D

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    Component Electronics, Inc NE76038D 3
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    NE76038 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE76038 NEC Semiconductor Selection Guide Original PDF
    NE76038 NEC Low noise K to Ku band GaAs MESFET. Original PDF
    NE76038 Unknown FET Data Book Scan PDF
    NE76038-T1 NEC Low noise K to Ku band GaAs MESFET. Original PDF

    NE76038 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE76038

    Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
    Text: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated


    Original     		PDF AN1015 NE76038) NE76038 uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise

    NE76038

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE76038 SCHEMATIC see Page 2 FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.73 RG capacitance picofarads VTOSC RD inductance nanohenries ALPHA 4 RS resistance ohms BETA 0.063 RGMET GAMMA KF GAMMADC(2)


    Original     		PDF NE76038 98e-11 2e-12 11e-12 4e-12 04e-12 24-Hour NE76038

    low noise, hetero junction fet

    Abstract: NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01
    Text: DBS Receiver NEW! NEW! NE429M01 Hetero Junction FET NE76038 MESFET • 6 pin super minimold package • Available on tape and reel • Low cost plastic package • Available on tape and reel UPC2711/12TB IF Amplifiers • Now available in smaller, lower cost SOT-363 packages


    Original     		PDF NE429M01 NE76038 UPC2711/12TB OT-363 NE696M01 NE329S01 NE721S01 UPC2781GR 520MHz 20MHz low noise, hetero junction fet NE76038 UPB1506 NE721S01 UPC2711 2,5GHz oscillator Prescalers NE329S01 NE429M01 NE696M01

    30374

    Abstract: NE76038 NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE76038 NE76038 NE76038-T1 24-Hour 30374 NE76038-T1

    NE76038

    Abstract: NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 3.5 • LOW COST PLASTIC PACKAGING


    Original     		PDF NE76038 NE76038 NE76038-T1 24-Hour NE76038-T1

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    C10535E

    Abstract: NE76038 NE76038-T1 9971 gm NEC 2532 n 749
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NE76038

    Abstract: No abstract text available
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 38 1.8 ± 0.2 S 1.8 ± 0.2 GATE LEAD MARK D 1.8 ± 0.2 G MARKING S 0.5 ± 0.1 4˚ ALL LEADS 0.55 ± 0.1 0.12 ± 0.05 1.1 ± 0.1 3˚ 8˚


    Original     		PDF NE76038 24-Hour NE76038

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


    Original     		PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008

    HA 12058

    Abstract: 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf
    Text: DATA SHEET GaAs MES FET NE76038 G ENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for im proved RF and DC performance reliability and uniform ­ ity. Its excellent low noise and high associated gain make


    OCR Scan     		PDF NE76038 NE76038 HA 12058 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE LTO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 G H z 24 HIGH ASSOCIATED GAIN: 21 7 .5 dB typical at 12 G H z Lg = 0.3 |im, Wg = 280 }im 1H m •Q


    OCR Scan     		PDF NE76038 IS12I b427S25 NE76038 NE76038-T1 aab5503

    NE76038

    Abstract: NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES_ • NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: V ds = 3 V, Ids = 10 m A 1.8 dB typical at 12 GHz • NE76038 * HIGH ASSOCIATED GAIN: I I I I- r 24


    OCR Scan     		PDF NE76038 NE76038 -J22L NE76038-T1

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos - 3 V, IDS = 10 m A LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 21 7.5 dB typical at 12 GHz 18 ffl 15 < a La s 0.3 |im, Wo = 280 jun LOW COST PLASTIC PACKAGING


    OCR Scan     		PDF NE76038 NE76038 reliab121 NE76038-T1

    NE32184A

    Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
    Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B


    OCR Scan     		PDF NE345L-10B NE345L-20B NE20248 NE24200 NE24283A NE32084 4/12GBz NE76038 4/12GHz NE76184A NE32184A Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application

    NE76038

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES MF7ftn NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz L g = 0 .3 im , W g = 2 8 0 |xm CO LOW COST PLASTIC PACKAGING


    OCR Scan     		PDF NE76038 NE76038 NE76038-T1

    NE67383

    Abstract: No abstract text available
    Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1


    OCR Scan     		PDF NE33200 NE67300 NE71300 NE76000 NE76100 NE76083A NE33284A NE25118 NE25139 NE25339 NE67383