Untitled
Abstract: No abstract text available
Text: AdvancedPreliminary Information Product Description Sirenza Microdevices’ SPF-3143 is a high performance 0.5µm pHEMT Gallium Arsenide FET. This 600µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device can
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SPF-3143
31dBm.
SPF-3143
DC-10
EDS-103162
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SPF-3143Z
Abstract: SPF3143Z SPF-3143 JESD22-B102C B1A SOT JESD22-A104B JESD22-A108B JESD22-A114 JESD22-A103-B SOT343 lna
Text: Reliability Qualification Report SPF-3143Z – Matte Sn, RoHS Compliant The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall
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SPF-3143Z
RQR-105311
SPF-3143Z
JESD22-A103B
JESD22-B102C
SPF-3143Z.
SPF3143Z
SPF-3143
JESD22-B102C
B1A SOT
JESD22-A104B
JESD22-A108B
JESD22-A114
JESD22-A103-B
SOT343 lna
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F31Z
Abstract: SPF-3143Z SPF-3143 SPF3143Z ZL 264 OIP35
Text: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-343 Product Description Features DC to 3.5 GHz Operation 0.58 dB NFMIN at 2 GHz 21 dB GMAX at 2 GHz + 31 dBm OIP3 5 V,40 mA
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SPF-3143Z
OT-343
SPF-3143Z
EDS-103162
F31Z
SPF-3143
SPF3143Z
ZL 264
OIP35
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SPF-3043
Abstract: SPF-3143 SPF 188 AN066 3143 LL1608-FS3N9S LL1608-FS4N7S MCH182CN104KK MCH185A150JK ML200C
Text: DESIGN APPLICATION NOTE - AN-066 SPF-3143 Amplifier Application Circuits Abstract This application note is intended to provide a reference point for an amplifier circuit design using Sirenza Microdevices’ SPF-3143 at 1960 MHz, in both dualbiased and self-biased configurations.
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AN-066
SPF-3143
MCH185A150JK
MCH182CN104KK
MCH185A8R2DK
LL1608-FS5N6S
SPF-3043
SPF 188
AN066
3143
LL1608-FS3N9S
LL1608-FS4N7S
MCH182CN104KK
MCH185A150JK
ML200C
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F31Z
Abstract: SPF-3143Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143
Text: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-343 Product Description Features SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT 0.58dB NFMIN at 2GHz
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SPF-3143Z
OT-343
31dBm
SPF-3143Z
DS091103
F31Z
SPF3143Z
SPF-3143
pHEMT FET marking A
spf3143
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F31Z
Abstract: SPF-3143Z GaAs FET operating junction temperature SPF3143Z SPF-3143
Text: SPF-3143Z Product Description Product Features • Available in Lead free, RoHS compliant, & Green packaging • DC-3.5 GHz Operation • 0.58 dB NFMIN @ 2 GHz • 21 dB GMAX @ 2 GHz • +31 dBm OIP3 5V,40mA • +17.7 dBm P1dB (5V,40mA) • Low Current, Low Cost
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SPF-3143Z
SPF-3143Z
EDS-103162
F31Z
GaAs FET operating junction temperature
SPF3143Z
SPF-3143
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SPF-3143
Abstract: sot-343 as DC-10 DC bias of gaas FET SOT343 lna
Text: Preliminary Preliminary Product Description Sirenza Microdevices’ SPF-3143 is a high performance 0.5µm pHEMT Gallium Arsenide FET. This 600µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device can
|
Original
|
PDF
|
SPF-3143
31dBm.
DC-10
EDS-103162
sot-343 as
DC bias of gaas FET
SOT343 lna
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