Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223
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MARKING 717
Abstract: sot-223 MARKING CODE 718 Power amplifier for mobile phones For sot223
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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09917
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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40337
Abstract: No abstract text available
Text: TQS - COMPANY PROPRIETARY INFORMATION SPEC TITLE: CLY5 DATASHEET SPEC. NO: DAT.CLY5 REV: D PAGE 1 OF 11 REVISION HISTORY REV A DATE 10-20-03 ECN# 23740 B 11-19-03 23972 C 12-15-05 30666 D 06-30-06 32716 DESCRIPTION OF CHANGE New release of CLY5 datasheet formerly DAT.056 rev C ; also
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OT223
30ireless
40337
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY5
Abstract: 93 69 MARKING CODE
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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04435
Abstract: CLY 70
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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CLY5
Abstract: MAX 8985 09069 ipc 9702 07293 13.3921
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223
CLY5
MAX 8985
09069
ipc 9702
07293
13.3921
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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PO 9038
Abstract: gaas fet marking a MAX 8985 pin diagram of 7414 019 triquint d 5287 power FET transistor 2 gigahertz Gp 28 db transistor 5478 01380
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description: The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223:
PO 9038
gaas fet marking a
MAX 8985
pin diagram of 7414
019 triquint
d 5287
power FET transistor 2 gigahertz Gp 28 db
transistor 5478
01380
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SD-0150000005
Abstract: daniels ft8 SD-0200000001 astro tool m22520 0150682-20-G1 015068220G1 S072 SD-0120000002 astro tool astro tool tgv 101
Text: C Series EMC Metallic Circular Connectors • Metal shell • Contacts density: 3x2mm, 5x1.5mm, 6x1.5mm, 8x1.2mm, 10x1mm, 12x1mm • Threaded coupling sleeve with self locking mechanism • Variable cable clamp 6 to 13.5mm. • Shielded: EMC 70dB at 100MHz.
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10x1mm,
12x1mm
100MHz.
612-20RG0
721-20ROG
M22520/2
182-20RG1
151-20ROG
SD-0120000002
SS-0150000003
SD-0150000005
daniels ft8
SD-0200000001
astro tool m22520
0150682-20-G1
015068220G1
S072
SD-0120000002
astro tool
astro tool tgv 101
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433MHZ amplifier 1w
Abstract: 433 mhz rf amplifier module 5w Smart RF04EB uhf linear amplifier module 5w ic sma 4038 ND 433 A TA31275EVKIT-433 smartrf04eb UGWW2USHN33A dkrn
Text: RF Wireless Evaluation Kit The Evaluation kits allow for a detailed evaluation of the Transceivers and Receiver. They enable testing of the device’s RF performance and require no additional support circuitry. The RF input uses a 50Ω matching network and an SMA connector for convenient connection to test
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TA31275EVKIT
TA31275M
TA32305M
TA32305EVKIT
16-QSOP
20-QSOP
ZNBG4000Q16CT-ND
ZNBG6000Q20CT-ND
ZNBG4000Q16TR-ND
ZNBG6000Q20TR-ND
433MHZ amplifier 1w
433 mhz rf amplifier module 5w
Smart RF04EB
uhf linear amplifier module 5w
ic sma 4038
ND 433 A
TA31275EVKIT-433
smartrf04eb
UGWW2USHN33A
dkrn
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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siemens gaas fet
Abstract: gaas fet marking J
Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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S0S163
Q62702-L90
615ms
i77mS-
417ps
siemens gaas fet
gaas fet marking J
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Untitled
Abstract: No abstract text available
Text: T1^ 5m m BILEVEL PCB LEDs CLEAR, INTERLOCKING ARRAYS part PART NUMBER EXAMPLES: 21PCT200 CWR6 -SI NO. I- r LENS, COLOR, BRIGHT. MODEL — T ALL LEDS SAME COLOR/LENS TYPE ~ LED COLOR 21PCT200CWR6-SI ELECTRO-OPTICAL CHARACTERISTICS Ta=25eC lr=10ff A(MAX)
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21PCT200
21PCT200CWR6-SI
21PCT190
22PCT190
23PCT190
24PCT190
LD190CWR6
LD190CR4
LD190CY4
21PCT
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sl1040
Abstract: SL1018
Text: FEATURES S100 D I R E C T L Y R E P L A C E S S T A ND A RD I N C A N D E C S E N T S LO NG LIFE , 1 0 0 , 0 0 0 H O U R S HIG H S H O C K / V IB R A T IO N R E S IS T A N C E S O L ID STATE B U I L T - I N R E S IS T O R FOR DIREC T 6 V TO 1 3 0 V A C / DC
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SL100
sl1040
SL1018
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uei 310
Abstract: bs27
Text: UEI> TëTil FLANGED & BAYONET EUROPEAN BASED LEDs FEATURES D IR E C T L Y R E P L A C E S STANDARD IN C A N D E C SE N T S • • • • • 10 YEAR / 1 0 0 , 0 0 0 HOURS SOLID STATE - HIGH S HO CK & VIBRATIO N RESISTANCE B U I L T - I N CURRENT LIMITING
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F154CR6-28V/20-P
BS276
940nm
uei 310
bs27
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BP 3126
Abstract: F3302 F3126
Text: DIRECTLY REPLACES STANDARD INCANDESCENTS LONG LIFE / 100,000 HOURS SOLID STATE, HIGH SHOCK/ VIBRATION RESISTANT BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLI CATIONS FOR 2V to 240VAC CHOICE OF 8 COLORS LOW CURRENT, POWER SAVINGS to 100 - 500% AND MORE
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240VAC
F3126,
F3127
F3126
4V/60
900mcd
BP 3126
F3302
F3126
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UEI 330
Abstract: resistor G202 FS206 fl206 FX206 TR6-A F-202
Text: TI-3/4 5mm MIDGET BASED LEDs UEI> MIDQET FLANGE, MIDQET GROOVE, MIDGET SCREW F I Ä ¥ U K 1 1 DIRECTLY REPLACES STANDARD INCANDESCENTS • 10 YEARS /1 0 0 ,0 0 0 HOURS • SOLID STATE - HIGH SHOCK & VIBRATION RESISTANCE • BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT AC OR DC
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120Vdc
FS206
FL206
FX206
F200/F202
G200/G202
S200/S202
UEI 330
resistor G202
TR6-A
F-202
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B3202
Abstract: B330 CG6* resistor
Text: [F H ÍA ¥ [Ri 01 g DIRECTLY REPLACES STANDARD INCANDESCENTS LONG LIFE / 100,000 HOURS SOLID STATE, HIGH SHOCK/ VIBRATION RESISTANT BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLI CATIONS FOR 2V to 240VAC CHOICE OF 8 COLORS LOW CURRENT, POWER SAVINGS
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240VAC
B3206,
B3202
B3306,
B3302
120MB,
B3127
B3126
BM326
B330
CG6* resistor
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BF963
Abstract: BF544 BF930 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors M axim um Ratings Characteristics T.=25°C NF mW G ps dB dB 40 50 30 30 30 30 30 10 10 200 200 200 200 200 200 200 200 200 29 25
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BF930
BF993
BF994S
BF995
BF996S
BF997
BF998
BF1005
BF1012
BF543
BF963
BF544
BF987
triode sot23
gaasfets
cLY2
BF965
CFY30
cly5
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Untitled
Abstract: No abstract text available
Text: L i c rJ f sP t1 au e ea i— E l p a r t T l9 i 5 m m BILEVEL PCB LEDs p CLEAR 21PCT200 CWR6 NO: i- PART NUMBER EXAMPLES: ALL LEDS SAME COLOR/LENS TYPE r ~ 21PCT200CWR6 E L E C T R O -O P T IC A L LENS, CO LO R, MODEL LE D C H A R A C T E R IS T IC S
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21PCT200
21PCT200CWR6
LD190CWR6
LD190CR4
21PCS190
21PCT190
2X203ARY
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