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    NE76184B Search Results

    NE76184B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE76184B NEC MES type field effect transistor Original PDF

    NE76184B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC Ga FET marking L

    Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.


    Original     		PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A NEC Ga FET marking L marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET

    NE76184B

    Abstract: transistor GaAS marking 576 transistor NEC D 587 NEC Ga FET marking L NEC Ga FET marking A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    low noise FET NEC U

    Abstract: ym 238
    Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce­ ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.


    OCR Scan     		PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A low noise FET NEC U ym 238

    NEC Ga FET marking Rf

    Abstract: nec gaas fet marking
    Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce­ ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.


    OCR Scan     		PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A IR30-00 NEC Ga FET marking Rf nec gaas fet marking