MGFS45V2735
Abstract: 051 166
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
-45dBc
051 166
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051 166
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
-45dBc
051 166
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MGFS45V2735
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
-45dBc
25deg
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC41V3642
MGFC41V3642
50ohm
Item-51]
30dBm
Item-51
10MHz
June/2004
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Fujitsu GaAs FET application note
Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was
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fcs64
magS22
angS22
Fujitsu GaAs FET application note
atc100a
FLL810
Hp 2564
FLL810IQ-3C
IMT-2000
S03A2750N1
RFP 1026 resistor
fujitsu x band amplifiers
"15 GHz" power amplifier 41dBm
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MGFC42V5964A
Abstract: mgfc42v5964
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC42V5964A
MGFC42V5964A
Item-51]
June/2004
mgfc42v5964
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MGFC40V4450
Abstract: 50GHz
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V4450 4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC40V4450
MGFC40V4450
29dBm
10MHz
June/2004
50GHz
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MGFC41V6472
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V6472 6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC41V6472
MGFC41V6472
30dBm
10MHz
Oct-03
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MGFC39V5964A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V5964A
MGFC39V5964A
28dBm
10MHz
June/2004
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MGFC36V6472A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V6472A 6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.
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MGFC36V6472A
MGFC36V6472A
25dBm
10MHz
June/2004
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MGFC36V4450A
Abstract: MGFC36V4450
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V4450A
MGFC36V4450A
25dBm
10MHz
June/2004
MGFC36V4450
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V4450 4.4 ~ 5.0GHz BAND 16 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC42V4450
MGFC42V4450
31dBm
10MHz
June/2004
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC42V3742
MGFC42V3742
31dBm
10MHz
June/2004
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MGFC39V7177A
Abstract: 71F71
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V7177A
MGFC39V7177A
28dBm
10MHz
June/2004
71F71
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gf-18
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC40V3742
MGFC40V3742
29dBm
10MHz
June/2004
gf-18
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MGFC36V7177A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
25dBm
10MHz
June/2004
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MGFC36V3742A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V3742A
MGFC36V3742A
25dBm
10MHz
June/2004
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delta 6 radio
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC42V7785A
MGFC42V7785A
32dBm
10MHz
June/2004
delta 6 radio
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC40V5964
MGFC40V3742
29dBm
10MHz
June/2004
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MGFC36V7785A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7785A 7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.
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MGFC36V7785A
MGFC36V7785A
25dBm
10MHz
June/2004
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MGFC39V4450A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V4450A 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.
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MGFC39V4450A
MGFC39V4450A
28dBm
10MHz
June/2004
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MGFC39V3742A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V3742A
MGFC39V3742A
28dBm
10MHz
June/2004
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mgfc39v7785
Abstract: MGFC39V7785A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.
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MGFC39V7785A
MGFC39V7785A
28dBm
10MHz
June/2004
mgfc39v7785
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GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Abstract: 6 ghz amplifier 10w MGFC40V6472 MGFC40V6472A GF-18 Gaas Power Amplifier 10W
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC40V6472
MGFC40V6472A
Item-51]
10MHz
June/2004
GAAS FET AMPLIFIER f 10Mhz to 2 GHz
6 ghz amplifier 10w
MGFC40V6472
GF-18
Gaas Power Amplifier 10W
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