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    MGFC42V5964 Price and Stock

    Mitsubishi Electric MGFC42V5964A-61

    C BAND, GAAS, N-CHANNEL, RF POWER, JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC42V5964A-61 73
    • 1 $50.7
    • 10 $50.7
    • 100 $44.85
    • 1000 $44.85
    • 10000 $44.85
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    MGFC42V5964 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC42V5964 Mitsubishi 5.9-6.4 GHz Band 16W Internally Matched GaAs FET Scan PDF
    MGFC42V5964A Mitsubishi 5.9-6.4GHz band 16W internally matched GaAs FET Scan PDF

    MGFC42V5964 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC42V5964A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964A MGFC42V5964A Item-51]

    MGFC42V5964A

    Abstract: mgfc42v5964
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964A MGFC42V5964A Item-51] June/2004 mgfc42v5964

    MGFC42V5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964 MGFC42V5964 MGFC42V5964-510V MGFC42V5964-51, 32dBm 10MHz May-02

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC42V5964 5.9 – 6.4 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964 MGFC42V5964

    5.9 GHz power amplifier

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC42V5964 5.9 – 6.4 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964 MGFC42V5964 -45dBc 32dBm 5.9 GHz power amplifier

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC42V5964A 5.9 – 6.4 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964A MGFC42V5964A -45dBc

    GF38

    Abstract: MGFC4
    Text: < C band internally matched power GaAs FET > MGFC42V5964A 5.9 – 6.4 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964A MGFC42V5964A -45dBc GF38 MGFC4

    MGFC42V5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically sealed metal-ceramic


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    PDF MGFC42V5964 MGFC42V5964 MGFC42V5964-51ge MGFC42V5964-51, 32dBm 10MHz May-02

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


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    PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


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    PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    MGFC42V5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 5 .9 — 6.4GH z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The OUTLINE DRAW ING M G F C 4 2 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especailly designed fo r use in 5 .9 ~ 6.4 20.4 ± 0 .2 0 .8 0 3 + 0.008


    OCR Scan
    PDF MGFC42V5964 MGFC42V5964 15GHz 40GHz 41GHz

    C42V5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 S .9 —6.4G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especailly designed fo r use in 5.9 ~ 6.4 GH z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan
    PDF MGFC42V5964 C42V5964