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    FLL810 Search Results

    FLL810 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL810IQ-3C Eudyna Devices L-Band High Power GaAs FET Original PDF
    FLL810IQ-4C Eudyna Devices L-Band High Power GaAs FET Original PDF

    FLL810 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FLL810IQ-4C

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


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    FLL810IQ-4C FLL810IQ-4C FCSI05019M200 PDF

    FLL810IQ-3C

    Abstract: No abstract text available
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


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    FLL810IQ-3C FLL810IQ-3C Symbo4888 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


    Original
    FLL810IQ-4C FLL810IQ-4C PDF

    564 fet

    Abstract: FLL810IQ-3C
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


    Original
    FLL810IQ-3C FLL810IQ-3C 564 fet PDF

    L-Band

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


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    FLL810IQ-4C FLL810IQ-4C L-Band PDF

    Eudyna Devices

    Abstract: eudyna fet FLL810IQ-3C
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


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    FLL810IQ-3C FLL810IQ-3C Symbo4888 Eudyna Devices eudyna fet PDF

    FLL810IQ-3C

    Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


    Original
    FLL810IQ-3C FLL810IQ-3C FCSI05019M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier PDF

    FLL810IQ-4C

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


    Original
    FLL810IQ-4C FLL810IQ-4C PDF

    FLL810IQ-4C

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


    Original
    FLL810IQ-4C FLL810IQ-4C Rat4888 PDF

    Fujitsu GaAs FET application note

    Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
    Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was


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    fcs64 magS22 angS22 Fujitsu GaAs FET application note atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


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    FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF