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    Mitsubishi Electric MGFC39V7785A-56

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    MGFC39V7785 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGFC39V7785 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC39V7785 Unknown FET Data Book Scan PDF
    MGFC39V7785A Mitsubishi 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC39V7785A Mitsubishi 7.7-8.5 GHz Band 8W Internally Matched GaAs FET Scan PDF

    MGFC39V7785 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC39V7785A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V7785A MGFC39V7785A 28dBm 10MHz

    mgfc39v7785

    Abstract: MGFC39V7785A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.


    Original     		PDF MGFC39V7785A MGFC39V7785A 28dBm 10MHz June/2004 mgfc39v7785

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V7785A MGFC39V7785A -45dBc 28dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V7785A MGFC39V7785A -45dBc 28dBm

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785 7.7 ~ 8 .5 G H z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit, millimeters inches The M G F C 3 9 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8.5


    OCR Scan     		PDF MGFC39V7785 27C102P, RV-15

    MGF4404A

    Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
    Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D


    OCR Scan     		PDF MGF2430 MGF2430A MGF2445 MGF4301A MGF4302A MGF4303A MGF4304A MGFC36V6471 MGFC36V7177 MGFC36V7785 MGF4404A MGF4403A 12GHz MGF4402A MGF4401A MGFK25M4045

    I8155

    Abstract: MGFC39V4450-51 MGFC39V7177-01
    Text: ^M ITSUBISHI MGFC39VXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFC39VXXXX products are internally impedance matched devices for use in C-band power amplifier applications. • Class A operation • Internally matched to 50Q • High output power


    OCR Scan     		PDF MGFC39VXXXX MGFC39VXXXX MGFC39V5258-01 MGFC39V5258-51 MGFC39V5964-01 MGFC39V5964-51 MGFC39V6471-01 MGFC39V6471-51 MGFC39V7177-01 MGFC39V7177-51 I8155 MGFC39V4450-51

    39V77

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V77 8SA 7 .7 ~ 8 .5 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 A isan internally im pedance-m atched GaAs power FET especially designed fo r use in 7 , 7 - 8 . 5 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF 39V77