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    Mitsubishi Electric MGFC36V3742A-56

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    Bristol Electronics MGFC36V3742A-56 10
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    Mitsubishi Electric MGFC36V3742A

    MESFET Transistor, N-CHAN, RFMOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC36V3742A 21
    • 1 $300
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    • 1000 $240
    • 10000 $240
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    MGFC36V3742A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC36V3742A Mitsubishi 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V3742A Mitsubishi 3.7-4.2 GHz BAND 4W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC36V3742A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC36V3742A

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V3742A 3.7 – 4.2 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V3742A MGFC36V3742A -45dBc 25dBm

    MGFC36V3742A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V3742A MGFC36V3742A 25dBm 10MHz June/2004

    MGFC36V3742A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V3742A MGFC36V3742A 25dBm 10MHz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V3742A 3.7 – 4.2 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V3742A MGFC36V3742A -45dBc 25dBm

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    FET TH 469

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET M G FC36V3742A ai ThrS i>ä art S~b' 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 3.7~4.2GHz


    OCR Scan     		PDF FC36V3742A MGFC36V3742A 45d8c FET TH 469

    ST3028

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAsFET> p f c t U MGFC36V3742A a f,oa', îP?C , aK: sU'ti\*C’ T N0ttae' nnHs«to Soi^e ? 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742A is an internally Unit : millimeters inches OUTLINE DRAWING impedance-matched


    OCR Scan     		PDF MGFC36V3742A MGFC36V3742A 101VIHz ST3028

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MG FC36V3742A P R 0 -* 3.7-4.2G HZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7—4.2GHz band amplifiers. The hermetically


    OCR Scan     		PDF FC36V3742A MGFC36V3742A

    MGFC36V3742A

    Abstract: 42GH 12api
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V3742A pRÔrîî oot^St«SS^,;Cha"9e' 'C-3^' .u îir t C 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET D ESC RIPTIO N O U TLIN E DRAW IN G The MGFC36V3742A is an internally impedance-matched U n it : m illim eters inch e s)


    OCR Scan     		PDF FC36V3742A MGFC36V3742A 45dBc ltem-01 ltem-54 42GH 12api

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <,GaAs FET MGFC36V3742A 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 36V3742A is an internally impedance-matched GaAs power FET especially designed fo r use in 3.7~ 4.2G H z band am plifiers. The hermetically


    OCR Scan     		PDF MGFC36V3742A 36V3742A Item-01

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan     		PDF MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A