Nec K 872
Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
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NE85001
NE8500199
NE8500100
NE8500100
Nec K 872
NE8500100-RG
NE8500100-WB
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MGFC39V5964A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V5964A
MGFC39V5964A
28dBm
10MHz
June/2004
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MGFC39V3436
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V3436
MGFC39V3436
28dBm
Oct-03
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MGFS45V2123A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45V2123A
MGFS45V2123A
079MIN.
25deg
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MGFC42V7785A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC42V7785A
MGFC42V7785A
32dBm
10MHz
June/2004
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MGFC36V7177A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
25dBm
10MHz
June/2004
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MGFC36V3742A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V3742A
MGFC36V3742A
25dBm
10MHz
June/2004
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MGFC39V7177A
Abstract: 71F71
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V7177A
MGFC39V7177A
28dBm
10MHz
June/2004
71F71
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MGFC36V3742A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V3742A
MGFC36V3742A
25dBm
10MHz
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MGFC39V7785A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V7785A
MGFC39V7785A
28dBm
10MHz
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MGFC36V3436
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V3436
MGFC36V3436
25dBm
Oct-03
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Band Power GaAs FET
Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45A2527B
MGFS45A2527B
Band Power GaAs FET
16621
high power FET transistor s-parameters
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MGFC45V6472A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC45V6472A
MGFC45V6472A
-45dBc
June/2004
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MGFC36V7177A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
25dBm
10MHz
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NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
NEC k 3654
gl 7445
nec k 813
nec 8725
gm 8562
5942
A 7601 0549
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MGFL45V1920A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFL45V1920A
MGFL45V1920A
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MGFC39V3742A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V3742A
MGFC39V3742A
28dBm
10MHz
June/2004
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MGFC36V6472A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V6472A 6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V6472A
MGFC36V6472A
25dBm
10MHz
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MGFC39V5964A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V5964A
MGFC39V5964A
28dBm
10MHz
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MGFC42V7785A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC42V7785A
MGFC42V7785A
32dBm
10MHz
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MGFS45V2325A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45V2325A
MGFS45V2325A
079MIN.
25deg
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12api
Abstract: 251C MGFC36V5964A
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically
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FC36V5964A
MGFC36V5964A
45dBc
ltem-01
10MHz"
12api
251C
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MGFC36V7785A
Abstract: fet 30 f 124
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7785A * nfflSU^e ' 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The
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FC36V7785A
MGFC36V7785A
45dBc
ltem-01
ltem-51
fet 30 f 124
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cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
cd 1619 CP AUDIO
cd 1691 cp
IC cd 1619 CP
ic HT 8970
cd 1619 CP
of cd 1619 cp
ic SL 1626
HT 25-19
5942
nec 8725
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