Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFS45V2123A Search Results

    SF Impression Pixel

    MGFS45V2123A Price and Stock

    Mitsubishi Electric MGFS45V2123A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MGFS45V2123A 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components MGFS45V2123A 1
    • 1 $375
    • 10 $375
    • 100 $375
    • 1000 $375
    • 10000 $375
    Buy Now

    MGFS45V2123A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGFS45V2123A Mitsubishi 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF
    MGFS45V2123A Mitsubishi 2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFS45V2123A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFS45V2123A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2123A MGFS45V2123A 079MIN. 25deg

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2123A MGFS45V2123A -45dBc 079MIN. 25deg

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2123A MGFS45V2123A 079MIN. 25ohm GF-51

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2123A MGFS45V2123A 079MIN. -45dBc

    MGFS45V2123A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFS45V2123A MGFS45V2123A -45dBc 25deg

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45V2123A

    Abstract: No abstract text available
    Text: MITSUBISHI SEM ICO NDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic


    OCR Scan
    PDF MGFS45V2123A FS45V2123A -45dBc 25deg MGFS45V2123A