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    MGFC36V3436 Search Results

    MGFC36V3436 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC36V3436 Mitsubishi 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V3436 Mitsubishi 3.4 - 3.6 GHz Band 4 W Internally Matched GaAs FET Original PDF
    MGFC36V3436 Mitsubishi 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF

    MGFC36V3436 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC36V3436

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V3436 MGFC36V3436 25dBm Oct-03

    MGFC36V3436

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3436 is an internally impedance-matched OUTLINE DRAWING GaAs power FET especially designed for use in 3.4 - 3.6 Unit : millimeters GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V3436 MGFC36V3436 -45dBc 25dBm 18-Sep-

    MGFC36V3436

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V3436 MGFC36V3436 25dBm June/2004

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V3436 3.4 – 3.6 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V3436 MGFC36V3436 -45dBc 25dBm

    MGFC36V3436

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V3436 3.4 – 3.6 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC36V3436 MGFC36V3436 -45dBc 25dBm

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original
    PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original
    PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    BUZ90af

    Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
    Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198


    Original
    PDF O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l

    la 4127

    Abstract: C 34 F
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan
    PDF MGFC36V3436 MGFC36V3436 -45dBc 25dBm 25deg la 4127 C 34 F

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET D ES C R IP TIO N The MGFC36V3436 is an internally impedance-matched O U T L IN E D R A W IN G GaAs power FET especially designed for use in 3.4 - 3.6 Unit : millimeters


    OCR Scan
    PDF MGFC36V3436 MGFC36V3436 -45dBc 25dBm 18-Sep-