Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFS45A2527B Search Results

    MGFS45A2527B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFS45A2527B Mitsubishi 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF

    MGFS45A2527B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Band Power GaAs FET

    Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45A2527B MGFS45A2527B Band Power GaAs FET 16621 high power FET transistor s-parameters

    MGFS45v

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45A2527B MGFS45V2527B 079MIN. -45dBc MGFS45v

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45A2527B MGFS45V2527B 079MIN.

    MGFS45A2527B

    Abstract: 16621
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45A2527B MGFS45A2527B 079MIN. 16621

    16621

    Abstract: 351 fet
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFS45A2527B MGFS45A2527B 079MIN. -45dBc 16621 351 fet