G1962
Abstract: uv photodiode, GaP GaP photodiode
Text: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material /Q* /Q /Q G1961 G1962 G1963 Package
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G1961
G1962
G1963
KGPD1007E02
uv photodiode, GaP
GaP photodiode
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Untitled
Abstract: No abstract text available
Text: GaPフォトダイオード G1961 G1962 G1963 ショットキ型 特長 用途 低暗電流 分析機器 高紫外感度 紫外線検出 構成/絶対最大定格 型名 G1961 G1962 G1963 外形 寸法図/ 窓材 ①/Q* ②/Q ③/Q パッケージ 受光面
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G1961
G1962
G1963
KGPDB0008JB
KGPDB0018JA
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GaP photodiode
Abstract: G1962 uv photodiode, GaP G1961 G1963 ACTIVE LOAD PHOTODIODE
Text: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/
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G1961,
G1962,
G1963
G1961
G1962
SE-171
KGPD1007E01
GaP photodiode
G1962
uv photodiode, GaP
G1961
G1963
ACTIVE LOAD PHOTODIODE
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GaP photodiode
Abstract: uv photodiode, GaP G1962 G1961 G1963
Text: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/
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G1961,
G1962,
G1963
G1961
G1962
SE-171
KGPD1007E01
GaP photodiode
uv photodiode, GaP
G1962
G1961
G1963
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Untitled
Abstract: No abstract text available
Text: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. G1961 G1962 G1963 Dimensional outline/ Window material /Q* /Q /Q Package
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G1961
G1962
G1963
KGPD1007E02
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G1961
Abstract: 075ID G1962 G1963
Text: PHOTODIODE GaPフォトダイオード G1961, G1962, G1963 ショットキ型 特長 用途 l 低暗電流 l 高紫外感度 l 分析機器 l 紫外線検出 • 一般定格/絶対最大定格 型名 G1961 G1962 G1963 外形 寸法図/ 窓材 ➀/Q * ➁/Q
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G1961,
G1962,
G1963
G1961
G1962
KGPDA0005JA
G1961
075ID
G1962
G1963
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G1966M SAW FILTER
Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
Text: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation
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L9453M
Abstract: K9253M K2958M K2977M k9260m G1966M SAW FILTER K3255K K9456M G1966M G1984M
Text: Siemens Matsushita Components IF Filters for Intercarrier Applications Picture Carrier MHz Type PC - SC Distance MHz 36.88 38.00 B1952M K2953M K2958M K2959M K2963M K2965M K2972M K2973M K6264K K6264K K6265K K6265K K6268K K6277K K6277K K6284K M1973D G1872M G1875M
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B1952M
K2953M
K2958M
K2959M
K2963M
K2965M
K2972M
K2973M
K6264K
L9453M
K9253M
K2958M
K2977M
k9260m
G1966M SAW FILTER
K3255K
K9456M
G1966M
G1984M
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Untitled
Abstract: No abstract text available
Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077
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0003b2fi
633nm
930nm
S2506-04
S2973
S3321
S4707-01
S5573
KSPDA0061EA
KSPDA0062EA
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C2719
Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for
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S4282-11
S4285-40
S4810
KSPDA00060EA
S2833
S2833-01
KSPDA0061EA
KSPDA0062EA
D003t
G2711-01
C2719
S1190-01
s1223 pin photodiode
S4160 equivalent
s12271010b
S4753
S3407-01
hamamatsu S1336
S4160
G1118
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P873-G35-552
Abstract: p1760-04 P873-13
Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel oped a variety of opto-electronic semiconductor de vices. These competitively priced high quality products are designed to meet the requirements of general and
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S-114
DK-2000
JAN/87
P873-G35-552
p1760-04
P873-13
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Untitled
Abstract: No abstract text available
Text: GaP Photodiodes Type No. Dimensional Outline P.44,45 / W indow Material Package Active Area Size Effective Active Area (mm) (mm2) 1.1X 1.1 1.0 Spectral Peak Response Sensitivity Range Wavelength A Ap (nm) (nm) Photo Sensitivity S Typ. (A/W) Short Circuit Current
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G1961
KGPDB0014EA
KGPDB0015EA
KGPDB0018EA
KGPDB0006EA
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S5532
Abstract: No abstract text available
Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral
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S4280
S5531
S4752
S5533
S4753
S4751
S5532
KSPDA0061EA
KSPDA0062EA
D003t
S5532
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Untitled
Abstract: No abstract text available
Text: GaP Photodiodes Type No. Dimensional Outline P.38,39 / Window Material * Package Effective Active Area Active Size Area (mm) (mm2) 1.1X1.1 1.0 Spectral Peak Response Sensitivity Range Wavelength À (nm) (nm) Photo Sensitivity S Typ. (A/W) Short Circuit Current
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254nm
400nm
G1961
G1961
015EA
pOB0008
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Untitled
Abstract: No abstract text available
Text: GaP Photodiodes j Dimensional ! Outline Type No. Active ; P.46. 47 / : Package i Window I Material ' 1 Area Size (mm) Spectral Peak Response i Sensitivity j i Active I Range ¡Wavelength! ¡ Area : !Effective X (mm2) \kp (nm) Short Circuit Current Isc Photo Sensitivity S
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G1961
G1963
KGPDB0C14EA
KGPDB0015EA
KGPDB0016EA
1Q-16
KGPOB0018EA
KGPDB0006EA
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S3407
Abstract: No abstract text available
Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity
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0DD31
1-43V
S1087
930nm
560nm
630nm
S4011
S4160
S4160-01
S1133
S3407
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S3884
Abstract: G1116
Text: GaAsP Photodiodes Soecfrai Response Hange Ü Typ« No U nle ss o tn e rw ise noted, Typ T a - 2. Package Peak SensÜMy W »wíe«#ti Ä# Phcflp Sanwfcvtfy 5 k&Q (am (AAV) ’ »imi {mm} ShW! CînXHt Current tec 100 h V»*10 mV 2456 * Mg? Xsâp • fiarfc
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31-V0I5'
G1115
G1116
G1120
G3067
G2711-01
G1735
G1736
Gf737
G1738
S3884
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Untitled
Abstract: No abstract text available
Text: Index by Type No. T yp e No Nam e Page S 1 0 8 7 . . Si P h o to d io d e V isible / V is ib le to IR R ange, T ype No S 1 3 3 6 -5 B K . Si P h o to d io d e (U V to IR R ange, fo r P re cisio n P h o to m e tr y . 14, 15
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S6036-01
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S1190-01
Abstract: No abstract text available
Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800
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G003b24
S2839
S1190-01
S1190-13
S1190-03
S2840
S1190
S2216-01
633nm
930nm
S1190-01
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G1961-01
Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
Text: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)
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Q002S3ti
254nm
400nm
G1961
G1962
G1963
G1961-01
G1962-01
S1087,
S1087-03
S1190 hamamatsu
S1190-01
S1188-02
S2216 02
S2164
S2216-01
S1226-18BQ
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g1962-01
Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt
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100lux
2856K
1Q-90%
G1117
G1120
G2711
G1735
G1736
G1737
G1738
g1962-01
u1116
G1126-02
hamamatsu PIN TO5
3x1015
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S2840
Abstract: No abstract text available
Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.
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0003b5G
S2829
S4404-01
S2041
S2042
KSPDA0061EA
KSPDA0062EA
D003t
G2711-01
S2833-04,
S2840
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Untitled
Abstract: No abstract text available
Text: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc
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0G03b
S1223
660nm
780nm
830nm
S1223-01
S3071
S1863-01
14mmTO-8
S3883
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Untitled
Abstract: No abstract text available
Text: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000
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00031a
S1406-03
S1406-04
S1406-05
S1406-06
S5590
S5591
S3887
G1957
S1446,
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