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    Abracon Corporation ART923X1015YZ10-IC

    RFID TAG R/W 902-928MHZ ENCAP
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    DigiKey ART923X1015YZ10-IC Tray 1,200 1
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    • 100 $3.53725
    • 1000 $2.84371
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    Avnet Americas ART923X1015YZ10-IC Ammo Pack 10 Weeks 1,200
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    Mouser Electronics ART923X1015YZ10-IC
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    Richardson RFPD ART923X1015YZ10-IC 1,200
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    Chip1Stop ART923X1015YZ10-IC 991
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    Abracon Corporation ART923X1015YZ10

    RFID TAG 920-925MHZ ENCAP
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    DigiKey ART923X1015YZ10 Tray 1,000
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    Avnet Americas ART923X1015YZ10 Bulk 10 Weeks 1,000
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    Mouser Electronics ART923X1015YZ10
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    Avnet Abacus ART923X1015YZ10 12 Weeks 1,000
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    Chip1Stop ART923X1015YZ10 93
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    Bourns Inc 4613X-101-562LF

    Resistor Networks & Arrays 13pins 5.6Kohms Bussed
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    Mouser Electronics 4613X-101-562LF
    • 1 $0.67
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    Bourns Inc 4613X-101-560LF

    Resistor Networks & Arrays 13pins 56ohms Bussed
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    Mouser Electronics 4613X-101-560LF
    • 1 $0.67
    • 10 $0.548
    • 100 $0.367
    • 1000 $0.215
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    Bourns Inc 4613X-101-564LF

    Resistor Networks & Arrays 13pins 560Kohms Bussed
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    Mouser Electronics 4613X-101-564LF
    • 1 $0.67
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    3X1015 Datasheets Context Search

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    induction furnace circuit diagram

    Abstract: INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING
    Text: THE ELECTROMAGNET Visible Micro Gamma Rays Wavelength Frequency, Hz: 0.1Å X-Rays U.V. Infrared EHF 10Å 100Å 0.1µ 1Å 1µ 10µ 100µ 0.1cm 1cm 3x1019 3x1018 3x1017 3x1016 3x1015 3x1014 3x1013 3x1012 3x1011 3x1 cycles per second VISIBLE SHORT WAVELENGTH


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    PDF 3x1019 3x1018 3x1017 3x1016 3x1015 3x1014 3x1013 3x1012 3x1011 induction furnace circuit diagram INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING

    report on PLCC

    Abstract: 40673 plcc 68 QL8X12A reliability report solar cell Amorphous 40673 equivalent ql8x12 144TQFP PACKAGE QL8X12B
    Text: SUMMARY August 1997 The pASIC device is a highly reliable Field Programmable Gate Array. The addition of the ViaLink to a CMOS process does not measurably increase the failure rate of the pASIC devices above that of normal CMOS logic products. The following is the summary of the High


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    Untitled

    Abstract: No abstract text available
    Text: 超高速MSMフォトディテクタ G4176シリーズ(GaAs) 超高速応答を実現した受光素子 •特長 ●超高速応答 *1 tr , tf = 30 ps(Typ.) ●低暗電流 100 pA Ta=25 ℃ ●大受光面積 200 mm□


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    PDF G4176ã G4176-03 G4176-01 G4176-03ã LPRD1022J05

    PDU-V102

    Abstract: No abstract text available
    Text: PHOTONIC DETECTORS INC. Silicon Photodiode, U.V. Enhanced Photovoltaic Type PDU-V102 PACKAGE DIMENSIONS INCH [mm] WINDOW CAP WELDED Ø0.184[4.67] 0.150[3.81] 0.040[1.02] Ø0.155[3.94] 0.060[1.52] WIRE BONDS C L 0.500 [12.70] MIN 45° C L Ø0.210[5.33] PHOTODIODE


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    PDF PDU-V102 PDU-V102 100-PDU-V102

    Ultrafast Photodetectors GMbh

    Abstract: GaAs MSM MSM photodetector photodetector 850 nm G4176 G4176-01 G4176-02 LPRD1014E03 ultrafast photodetectors
    Text: ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES Figure 1: Optical Pulse Response ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES Figure 2: Spectral Response Including time response of light source, bias-tee and oscilloscope (VB=7V) (VB=7V) 100 OUTPUT RADIANT SENSITIVITY (A/W)


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    PDF G4176 G4176) G4176 G4176-01 G4176-02 G4176-SE 1/4-36UNS-2B Ultrafast Photodetectors GMbh GaAs MSM MSM photodetector photodetector 850 nm G4176-01 G4176-02 LPRD1014E03 ultrafast photodetectors

    JIS-C-6481

    Abstract: A1303 JISC6481 A13030 EV-9200G-64 IE-78001-R-A V800 60Vp 176G 121FPBGA
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF EV-9200 EV-9500 U14777JJ1V1IF001 U14777JJ1V1IF00 1EV-9200. 2EV-9500. M7A98 EVEV-9200EV-9500 JIS-C-6481 A1303 JISC6481 A13030 EV-9200G-64 IE-78001-R-A V800 60Vp 176G 121FPBGA

    pj 989

    Abstract: PASIC 380 145026 14093 38980 report on PLCC solar cell Amorphous 144TQFP PACKAGE 84 pin plcc ic base QL8X12B-2
    Text: pASIC 1 FAMILY Reliability Report SUMMARY The pASIC device is a highly reliable Field Programmable Gate Array. The addition of the ViaLink to a CMOS process does not measurably increase the failure rate of the pASIC devices above that of normal CMOS logic products. The following is the summary of the High


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    PDF pp27-30. pj 989 PASIC 380 145026 14093 38980 report on PLCC solar cell Amorphous 144TQFP PACKAGE 84 pin plcc ic base QL8X12B-2

    Photodiode cost sheet

    Abstract: pin photodiode 1Ghz 0.35 pF SCA-HS16B pin Photodiode 2 GHz circuit
    Text: SCA-HS16B Silicon PIN Photodiode Data Sheet Description Applications The SCA-HS16B is a high-speed silicon PIN photodiode with • • • • bandwidth of 1GHz and low capacitance with high Fiber Optic Communications Fast Pulse Measurement Data Communications


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    PDF SCA-HS16B SCA-HS16B 320nm MIL-PRF-19500 Photodiode cost sheet pin photodiode 1Ghz 0.35 pF pin Photodiode 2 GHz circuit

    SEMICOA SCA-HS16B

    Abstract: pin Photodiode 2 GHz circuit
    Text: SCA-HS16B Silicon PIN Photodiode Data Sheet Description Applications The SCA-HS16B is a high-speed silicon PIN photodiode with • • • • bandwidth of 1GHz and low capacitance with high Fiber Optic Communications Fast Pulse Measurement Data Communications


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    PDF SCA-HS16B SCA-HS16B 320nm MIL-PRF-19500 SEMICOA SCA-HS16B pin Photodiode 2 GHz circuit

    PDB-V102

    Abstract: No abstract text available
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photovoltaic Type PDB-V102 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] WINDOW CAP WELDED Ø0.184[4.67] 0.150[3.81] 0.040[1.02] Ø0.155[3.94] 0.060[1.52] WIRE BONDS C L 0.500 [12.70] MIN 45° C L Ø0.210[5.33] PHOTODIODE


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    PDF PDB-V102 PDB-V102 100-PDB-V102

    G4176-03

    Abstract: G7096-03 G417603 G4176 G7096 LPRD1022J03
    Text: PRELIMINARY DATA 超高速MSMフォトディテクタ G4176シリーズ(GaAs) G7096シリーズ(InGaAs) 超高速応答を実現した受光素子 •特長 ●超高速応答 G4176-03 : tr , tf = 30 ps(Typ.) G7096-03 : tr = 40 ps(Typ.)


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    PDF G4176GaAs G7096InGaAs G4176-03 G7096-03 G4176 G4176-01 G7096-01 G4176-03 G7096-03 G417603 G4176 G7096 LPRD1022J03

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT FEATURES • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact • High Reliability • Low Noise • Detector for Low Luminance • No Testable Degradation


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    PDF 3X10-15 x1013 KOM2045 fl23t

    DF703

    Abstract: telefunken-spezialrohren ecc85 Resonators magic eye ech 81 Fluorescent Indicator Tube T116 spezialrohrentypen RG-294
    Text: TELEFUNKEN Erläuterungen zu den technischen Daten der TELEFUNKEN-Spezialröhren für Elektronik Einführung Die technischen Daten werden in Form von Meßwerten, Betriebswerten, Kapazitäten, Grenzwerten und Kennlinien angegeben. Diese Meßwerte, Betriebswerte und Kenn­


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    DF703

    Abstract: telefunken s 150 u 110 telefunken
    Text: TELEFUNKEN Submin-Röhre direkt geheizt Elektrom eter-Pentode Vorläufige technische Daten 1,25 Uf ca. If V 10 mA Meß- und Betriebswerte Ua 8 ,5 V Ug2 4/5 V UBi la -2 V Uag2 10,5 V 6 |iA Ug, -3 V 3,6 LlA la +g2 s 200 JlA 175 hA/’ Ig2 S 14 MQ 3X10-15 Igi


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    PDF X10-13 -1x10 -2x10 DF703 telefunken s 150 u 110 telefunken