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    Seiko Epson Corporation SG-8018CG 107.374182M-TJHPA0

    Standard Clock Oscillators SG-8018CG 107.374182M-TJHPA0: MHZ OSC 1.8V-3.3V +/-50PPM -40-105C O/E 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CG 107.374182M-TJHPA0
    • 1 $0.97
    • 10 $0.86
    • 100 $0.71
    • 1000 $0.56
    • 10000 $0.529
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    Seiko Epson Corporation SG-8018CG 107.374182M-TJHSA0

    Standard Clock Oscillators SG-8018CG 107.374182M-TJHSA0: MHZ OSC 1.8V-3.3V +/-50PPM -40-105C ST 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CG 107.374182M-TJHSA0
    • 1 $0.97
    • 10 $0.86
    • 100 $0.71
    • 1000 $0.56
    • 10000 $0.529
    Get Quote

    YAGEO Corporation RT0603BRD0780K6L

    Thin Film Resistors - SMD 1/10W 80.6K ohm .1% 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RT0603BRD0780K6L Reel 10,000
    • 1 -
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    • 1000 -
    • 10000 $0.0297
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    Link-PP Int'L Technology Co Ltd LPJG17370-1AONL

    Telecom and Datacom Connector, 8Contact(s),Female,Right Angle, Solder Terminal
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC LPJG17370-1AONL 1
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    G1737 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    G1737 Hamamatsu GaAsP photodiode Original PDF

    G1737 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G1735

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. G1735 G1736 G1737 G1738


    Original
    PDF G1735 G1736 G1737 G1738 G1740 G3297 KGPD1003E02

    G1736

    Abstract: G1735 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsPフォトダイオード 拡散型 赤感度延長タイプ 特長 用途 l 低暗電流 l 高安定性 l 赤感度延長タイプ l 分析機器 l 色識別 • 一般定格/絶対最大定格 型名 G1735 G1736 G1737 G1738 G1740 G3297 外形


    Original
    PDF G1735 G1736 G1737 G1738 G1740 G3297 G1736 G1735 G1737 G1738 G1740 G3297

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original
    PDF G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297

    transistor d1 3005

    Abstract: transistor 3005 PC3033 c3033 PC3005H-AZ C3005 transistor 3005 2 PC3005
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3033,3005 LOW-SATURATION STABILIZED POWER SUPPLY WITH ON/OFF FUNCTION OUTPUT CURRENT: 1 A DESCRIPTION The μPC3033 and 3005 are low-saturation type regulators with an output current of 1 A at respective output


    Original
    PDF PC3033 transistor d1 3005 transistor 3005 c3033 PC3005H-AZ C3005 transistor 3005 2 PC3005

    C3005

    Abstract: PC3033 C3033 PC3005
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PDF PC3033 PC3033 PC3005 C3033 WS60-00-1 PC3033H-AZ, PC3005H-AZ4 SIPTO-126 G17372JJ2V0DS C3005 C3033 PC3005

    PC3033

    Abstract: C3005 C3033 PC3005
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    C3005

    Abstract: PC3033 PC3005 C3033 PC3005H-AZ4
    Text: データ・シート バイポーラ・アナログ集積回路 Bipolar Analog Integrated Circuit PC3033,3005 ON/OFF 機能付き低飽和正電圧安定化電源回路(出力電流 1 A) μ PC3033 およびμ PC3005 は,出力電圧がそれぞれ 3.3 V および 5 V で出力電流が 1 A の低飽和型シリーズ・レギュ


    Original
    PDF PC3033 PC3033 PC3005 C3033 SIPTO-126 PC3005H PC3005H-AZ C3005 PC3005 C3033 PC3005H-AZ4

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original
    PDF G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735

    Hamamatsu G1735

    Abstract: G1735
    Text: GaAsP photodiodes Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. Dimensional outline/


    Original
    PDF G1735 G1736 G1737 G1738 G1740 KGPD1003E03 Hamamatsu G1735

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types Type No. Dim ensional Outline (P.44-50)/ W indow Material Package Active Area Size Effective Active Area - (mm). (mm2) Spectral Response Range A (nm) Photo Sensitivity S Typ. (A/W ) , Peak Sensitivity Wavelength Ap : (nm)


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    PDF G1116 G1117 G1120 G1737 KGPDB0004EA G1118, G3067, G1735, G1738j KSPDB0007EA

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


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    PDF 00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


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    PDF 560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types - Type No. I Dimensional Outline (P.46 to 53)/ Window Material '1 Area X Peak Sensitivity Wavelength ^p (mm2) (nm) (nm) Effective Active Active Package Area Size (mm) Spectral Response Range Photo Sensitivity S (A/W)


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    PDF Isc100 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 G5645 G5842

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


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    PDF S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01

    4a2l

    Abstract: No abstract text available
    Text: PRELIMINAR in te i 8XC251SA/SB/SP/SQ HIGH-PERFORMANCE CHMOS MICROCONTROLLER Commercial/Express • Real-time and Programmed Wait State Bus Operation ■ User-selectable Configurations: — External Wait States 0-3 wait states ■ Binary-code Compatible with MCS> 51


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    PDF 8XC251SA/SB/SP/SQ 44-pin 40pin 40-byte 16-bit 32-bit 256-Kbyte 64-Kbyte 8XC251 4a2l

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


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    PDF 0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    PDF G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE

    cdvv

    Abstract: Dense pac
    Text: DENSE PAC 4 Megabit High Speed CMOS SRAM MICROSYSTEMS DPS256X16Cn3/DPS256X16Bn3 DESCRIPTION: The DPS256X16Cn3/DPS256X16Bn3 High Speed SRAM "ST A C K " modules are a revol utionarynew memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .


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    PDF DPS256X16Cn3/DPS256X16Bn3 DPS256X16Cn3/DPS256X16Bn3 50-pin DPS256X16Cn3/DPS256X16Bn3STACK 125-C -t-125 California92841-1428 30A097-34 00D174S cdvv Dense pac

    S1190 hamamatsu

    Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
    Text: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K


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    PDF 42STbGT S1188-02 S1188-06 S2216-01 S2216-02 S1190 S1190-01 S1190-03 S1190-04 S1223 S1190 hamamatsu S2856 S2216 02 S2164-01

    G1961-01

    Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
    Text: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)


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    PDF Q002S3ti 254nm 400nm G1961 G1962 G1963 G1961-01 G1962-01 S1087, S1087-03 S1190 hamamatsu S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ

    g1962-01

    Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
    Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt


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    PDF 100lux 2856K 1Q-90% G1117 G1120 G2711 G1735 G1736 G1737 G1738 g1962-01 u1116 G1126-02 hamamatsu PIN TO5 3x1015